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| Presentation | 2017-12-19 09:40 Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs Akira Endoh, Issei Watanabe, Akifumi Kasamatsu (NICT), Takashi Mimura (NICT/Fujitsu Labs.)  ED2017-82 Link to ES Tech. Rep. Archives: ED2017-82 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We fabricated In0.7Ga0.3As/InAs/In0.7Ga0.3As and In0.7Ga0.3As channel HEMTs and measured their DC and RF characteristics at 300 and 16 K. The drain-source current Ids of the InGaAs/InAs/InGaAs channel HEMT is more than twice that of the InGaAs channel HEMT. The cutoff frequency fT value increases by about 20 to 35% with cooling from 300 to 16 K for both HEMTs. On the other hand, the increase in the maximum oscillation frequency fmax by cooling for the InGaAs/InAs/InGaAs channel HEMT is much greater than that for the InGaAs channel HEMT. The increase in fmax for the InGaAs channel HEMT is about 30 to 40%. On the other hand, the increase for the InGaAs/InAs/InGaAs channel HEMT is over 70%, which results from the suppression of increasing drain conductance gd. The suppression of gd is due to the more confinement of electrons in the InAs layer by cooling. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaAs/InAs/InGaAs / Cryogenic characteristics / Drain-source current / Cutoff frequency / Maximum oscillation frequency / Drain conductance / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 364, ED2017-82, pp. 37-40, Dec. 2017. | |
| Paper # | ED2017-82 | |
| Date of Issue | 2017-12-11 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-82 Link to ES Tech. Rep. Archives: ED2017-82 |
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| Conference Information | |
| Committee | ED THz |
| Conference Date | 2017-12-18 - 2017-12-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Cryogenic DC and RF Characteristics of InGaAs/InAs/InGaAs Composite Channel HEMTs |
| Sub Title (in English) | |
| Keyword(1) | InGaAs/InAs/InGaAs |
| Keyword(2) | Cryogenic characteristics |
| Keyword(3) | Drain-source current |
| Keyword(4) | Cutoff frequency |
| Keyword(5) | Maximum oscillation frequency |
| Keyword(6) | Drain conductance |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akira Endoh |
| 1st Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 2nd Author's Name | Issei Watanabe |
| 2nd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 4th Author's Name | Takashi Mimura |
| 4th Author's Affiliation | National Institute of Information and Communications Technology/Fujitsu Laboratories Ltd. (NICT/Fujitsu Labs.) |
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| Speaker | Author-1 |
| Date Time | 2017-12-19 09:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2017-82 |
| Volume (vol) | vol.117 |
| Number (no) | no.364 |
| Page | pp.37-40 |
| #Pages | 4 |
| Date of Issue | 2017-12-11 (ED) |
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