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| Presentation | 2017-12-19 09:00 [Invited Talk] Development of Antimonide-Based Transistors Hiroki Fujishiro, Kyosuke Isono, Takuto Takahashi, Yoshiaki Harada, Naoki Oka, Jun Takeuchi, Yui Fujisawa (TUS), Sachie Fujikawa (Tokyo Denki Univ.), Ryuto Machida (TUS), Issei Watanabe, Yoshimi Yamashita, Akira Endoh, Shinsuke Hara, Akifumi Kasamatsu (NICT)  ED2017-81 Link to ES Tech. Rep. Archives: ED2017-81 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Quantum corrected Monte Carlo simulation shows that the InSb HEMT exhibits intrinsic fT more than 1 THz from Vds of around 0.2 V, because of the higher μ and electron velocity vd coming from the smallest m*. Upper limit of intrinsic fT is estimated to be 1.98 THz. The small m* makes velocity fluctuation σv2 larger, however, it also enables low Vds operation that suppresses electron heating. Then, along with the large gm, NFmin is estimated to be 0.31 dB at 100 GHz (Vds = 0.2 V). The InSb HEMT is fabricated by damage-less process using evaporated SiOx film. The devices with single and double recess structures exhibit fT of 302 and 316 GHz, respectively (Vds = 0.5 V, Lg = 50 nm). The InSb/Ga0.35In0.65Sb composite channel is developed to increase μ and 2DEG density Ns, simultaneously. This exhibits μ of 13,280 cm2/Vs, Ns of 2.27×1012 cm-2 and sheet resistance Rs of 207 Ω/□, which are 25 ％ lower, 114 ％ larger and 37 ％ lower than the InSb channel. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InSb / GaInSb / High Electron Mobility Transistor / Teraheltz / Cutoff Frequency / Minimum Noise Figure / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 364, ED2017-81, pp. 33-36, Dec. 2017. | |
| Paper # | ED2017-81 | |
| Date of Issue | 2017-12-11 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-81 Link to ES Tech. Rep. Archives: ED2017-81 |
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| Conference Information | |
| Committee | ED THz |
| Conference Date | 2017-12-18 - 2017-12-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-12-ED-THz |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of Antimonide-Based Transistors |
| Sub Title (in English) | |
| Keyword(1) | InSb |
| Keyword(2) | GaInSb |
| Keyword(3) | High Electron Mobility Transistor |
| Keyword(4) | Teraheltz |
| Keyword(5) | Cutoff Frequency |
| Keyword(6) | Minimum Noise Figure |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroki Fujishiro |
| 1st Author's Affiliation | Tokyo University of Science (TUS) |
| 2nd Author's Name | Kyosuke Isono |
| 2nd Author's Affiliation | Tokyo University of Science (TUS) |
| 3rd Author's Name | Takuto Takahashi |
| 3rd Author's Affiliation | Tokyo University of Science (TUS) |
| 4th Author's Name | Yoshiaki Harada |
| 4th Author's Affiliation | Tokyo University of Science (TUS) |
| 5th Author's Name | Naoki Oka |
| 5th Author's Affiliation | Tokyo University of Science (TUS) |
| 6th Author's Name | Jun Takeuchi |
| 6th Author's Affiliation | Tokyo University of Science (TUS) |
| 7th Author's Name | Yui Fujisawa |
| 7th Author's Affiliation | Tokyo University of Science (TUS) |
| 8th Author's Name | Sachie Fujikawa |
| 8th Author's Affiliation | Tokyo Denki University (Tokyo Denki Univ.) |
| 9th Author's Name | Ryuto Machida |
| 9th Author's Affiliation | Tokyo University of Science (TUS) |
| 10th Author's Name | Issei Watanabe |
| 10th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 11th Author's Name | Yoshimi Yamashita |
| 11th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 12th Author's Name | Akira Endoh |
| 12th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 13th Author's Name | Shinsuke Hara |
| 13th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 14th Author's Name | Akifumi Kasamatsu |
| 14th Author's Affiliation | National Institute of Information and Communications Technology (NICT) |
| 15th Author's Name | |
| 15th Author's Affiliation | () |
| 16th Author's Name | |
| 16th Author's Affiliation | () |
| 17th Author's Name | |
| 17th Author's Affiliation | () |
| 18th Author's Name | |
| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2017-12-19 09:00:00 |
| Presentation Time | 40 minutes |
| Registration for | ED |
| Paper # | ED2017-81 |
| Volume (vol) | vol.117 |
| Number (no) | no.364 |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2017-12-11 (ED) |
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