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Paper Abstract and Keywords
Presentation 2017-12-18 14:30
Tribological formation of chalcogenide 2D layered semiconductor MoS2 thin films
Takafuki Ito, Tadao Tanabe, Akinori Matsunaga, Yutaka Oyama (Tohoku Univ.) ED2017-75 Link to ES Tech. Rep. Archives: ED2017-75
Abstract (in Japanese) (See Japanese page) 
(in English) We propose a novel fabrication process of 2D layered semiconductors by using tribochemical reaction. This study is focused on the formation of chalcogenide 2D layered semiconductor, molybdenum disulfide (MoS2), using tribological chemical reaction of Molybdenum dialkyldithiocarbamates(MoDTC) to MoS2.
MoS2 is an expected semiconductor for a field effect transistor(FET) with higher speed and lower electric power. This study investigated surface reaction activity of MoDTC to MoS2 on various stainless steel surfaces.
Keyword (in Japanese) (See Japanese page) 
(in English) MoS2 / 2D Layered Structure / 2D Materials / Chalcogenide / Friction Process / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 364, ED2017-75, pp. 13-14, Dec. 2017.
Paper # ED2017-75 
Date of Issue 2017-12-11 (ED) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-75 Link to ES Tech. Rep. Archives: ED2017-75

Conference Information
Committee ED THz  
Conference Date 2017-12-18 - 2017-12-19 
Place (in Japanese) (See Japanese page) 
Place (in English) RIEC, Tohoku Univ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter-wave, terahertz-wave devices and systems 
Paper Information
Registration To ED 
Conference Code 2017-12-ED-THz 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Tribological formation of chalcogenide 2D layered semiconductor MoS2 thin films 
Sub Title (in English)  
Keyword(1) MoS2  
Keyword(2) 2D Layered Structure  
Keyword(3) 2D Materials  
Keyword(4) Chalcogenide  
Keyword(5) Friction Process  
1st Author's Name Takafuki Ito  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Tadao Tanabe  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Akinori Matsunaga  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Yutaka Oyama  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Date Time 2017-12-18 14:30:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2017-75 
Volume (vol) IEICE-117 
Number (no) no.364 
Page pp.13-14 
#Pages IEICE-2 
Date of Issue IEICE-ED-2017-12-11 

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