Paper Abstract and Keywords |
Presentation |
2017-12-15 10:35
[Encouragement Talk]
Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86 Link to ES Tech. Rep. Archives: LQE2017-86 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. However, previously reported structures have a problem that In-rich InGaN QWs for longer wavelength emission are fabricated on the (0001) polar plane, where the optical transition probability is low due to the strain-induced piezoelectric fields. In this study, we demonstrate that polar-plane-free 3D QWs, which possess highly efficient polychromatic emission properties, can be fabricated on (-1-12-2) semipolar GaN substrates. Furthermore, white color synthesis using the polar-plane-free structure is also demonstrated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
III-nitride semiconductors / metalorganic vapor phase epitaxy / three-dimensional structures / polychromatic emission / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 358, LQE2017-86, pp. 5-8, Dec. 2017. |
Paper # |
LQE2017-86 |
Date of Issue |
2017-12-08 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
LQE2017-86 Link to ES Tech. Rep. Archives: LQE2017-86 |
Conference Information |
Committee |
LQE |
Conference Date |
2017-12-15 - 2017-12-15 |
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(See Japanese page) |
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Paper Information |
Registration To |
LQE |
Conference Code |
2017-12-LQE |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters |
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Keyword(1) |
III-nitride semiconductors |
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metalorganic vapor phase epitaxy |
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three-dimensional structures |
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polychromatic emission |
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1st Author's Name |
Yoshinobu Matsuda |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Mitsuru Funato |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Yoichi Kawakami |
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Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-12-15 10:35:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
LQE2017-86 |
Volume (vol) |
vol.117 |
Number (no) |
no.358 |
Page |
pp.5-8 |
#Pages |
4 |
Date of Issue |
2017-12-08 (LQE) |
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