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| Presentation | 2017-12-01 13:20 Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)  ED2017-63 CPM2017-106 LQE2017-76 Link to ES Tech. Rep. Archives: ED2017-63 CPM2017-106 LQE2017-76 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operation has been reported by hydrogen termination and NO2 hole doping. Furthermore, by applying the Al2O3 protective film, operation stability in vacuum of about 2 hours is obtained. But, reliability tests and mechanisms have not been studied so far. In this study, we observed stable operation in air for 14.3 hours with NO2 hole doping and Al2O3 protective film deposition. Furthermore, the degradation mechanism was analyzed by comparing the electrical characteristics before and after the stress test. From the analysis results, it was found that the electric field concentrates at the gate edge, the interface between the Al2O3 film itself, the interface between the diamond surface and the Al2O3 film degraded, and an increase in the leakage current through the gate insulating film and a decrease in the drain current occur. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Diamond MOS FET / High frequency device / High power device / Direct current stress / Electrical properties / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 331, ED2017-63, pp. 69-72, Nov. 2017. | |
| Paper # | ED2017-63 | |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-63 CPM2017-106 LQE2017-76 Link to ES Tech. Rep. Archives: ED2017-63 CPM2017-106 LQE2017-76 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2017-11-30 - 2017-12-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress |
| Sub Title (in English) | |
| Keyword(1) | Diamond MOS FET |
| Keyword(2) | High frequency device |
| Keyword(3) | High power device |
| Keyword(4) | Direct current stress |
| Keyword(5) | Electrical properties |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yuma Ishimatsu |
| 1st Author's Affiliation | Saga University (Saga Univ.) |
| 2nd Author's Name | Kosuke Funaki |
| 2nd Author's Affiliation | Saga University (Saga Univ.) |
| 3rd Author's Name | Satoshi Masuya |
| 3rd Author's Affiliation | Saga University (Saga Univ.) |
| 4th Author's Name | Kyosuke Miyazaki |
| 4th Author's Affiliation | Saga University (Saga Univ.) |
| 5th Author's Name | Takayoshi Oshima |
| 5th Author's Affiliation | Saga University (Saga Univ.) |
| 6th Author's Name | Makoto Kasu |
| 6th Author's Affiliation | Saga University (Saga Univ.) |
| 7th Author's Name | Toshiyuki Oishi |
| 7th Author's Affiliation | Saga University (Saga Univ.) |
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| Speaker | Author-1 |
| Date Time | 2017-12-01 13:20:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2017-63, CPM2017-106, LQE2017-76 |
| Volume (vol) | vol.117 |
| Number (no) | no.331(ED), no.332(CPM), no.333(LQE) |
| Page | pp.69-72 |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
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