Paper Abstract and Keywords |
Presentation |
2017-12-01 13:45
Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.) ED2017-64 CPM2017-107 LQE2017-77 Link to ES Tech. Rep. Archives: ED2017-64 CPM2017-107 LQE2017-77 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
As the insulator for MIS structures in GaN-based power devices, Al2O3 fabricated by ALD has often been used. The post-deposition annealing (PDA) has also been performed. However, the effects of the layer thickness and the PDA temperature on chemical characteristics of Al2O3 layers have not been clarified enough. In this study, the chemical characteristics of Al2O3 layers were studied by XPS and ESR. As the results, it was found that impurities in Al2O3 decrease remarkably by PDA at 600℃, and the amount of unpaired electrons in Al2O3 increase with the crystallization by PDA above 700℃. In order to reduce both the threshold voltage shift and the leakage current of GaN-based devises, two-layer structures that consist of an Al2O3 layer with PDA above 700℃ and a current blocking layer seem to be effective. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / MIS / ALD / Al2O3 / XPS / ESR / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 331, ED2017-64, pp. 73-76, Nov. 2017. |
Paper # |
ED2017-64 |
Date of Issue |
2017-11-23 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-64 CPM2017-107 LQE2017-77 Link to ES Tech. Rep. Archives: ED2017-64 CPM2017-107 LQE2017-77 |
Conference Information |
Committee |
LQE CPM ED |
Conference Date |
2017-11-30 - 2017-12-01 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Inst. tech. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Semiconductor Devices, Materials, Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2017-11-LQE-CPM-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR |
Sub Title (in English) |
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Keyword(1) |
GaN |
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MIS |
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ALD |
Keyword(4) |
Al2O3 |
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XPS |
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ESR |
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1st Author's Name |
Toshiharu Kubo |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Makoto Miyoshi |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Takashi Egawa |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2017-12-01 13:45:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2017-64, CPM2017-107, LQE2017-77 |
Volume (vol) |
vol.117 |
Number (no) |
no.331(ED), no.332(CPM), no.333(LQE) |
Page |
pp.73-76 |
#Pages |
4 |
Date of Issue |
2017-11-23 (ED, CPM, LQE) |
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