Paper Abstract and Keywords |
Presentation |
2017-12-01 10:20
Wettability improvement of thin gate dielectrics by mixture of self-assembled monolayers Kazunori Kuribara, Toshiki Higashino, Taiki Nobeshima, Takehito Kozasa, Sei Uemura, Manabu Yoshida (AIST) OME2017-38 Link to ES Tech. Rep. Archives: OME2017-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have improved wettability of thin gate dielectrics by mixing self-assembled monolayers (SAMs). Conventional SAMs shows low surface energy and don’t suit for solution process because of it alkyl chain terminal. Therefore, we mix lyophilic SAM with aromatic terminal into them to reduce contact angle by 30 degree. Optimizing ratio of molecular number of SAMs, we obtain high mobility and leakage current low enough. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Self-assembled monolayer / Low-voltage operation / Wettability / Solution process / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 334, OME2017-38, pp. 15-18, Dec. 2017. |
Paper # |
OME2017-38 |
Date of Issue |
2017-11-24 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
OME2017-38 Link to ES Tech. Rep. Archives: OME2017-38 |
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