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| Presentation | 2017-11-30 14:25 Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony)  ED2017-51 CPM2017-94 LQE2017-64 Link to ES Tech. Rep. Archives: ED2017-51 CPM2017-94 LQE2017-64 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Analysis of S-shaped temperature dependence of PL peak energy is widely used to evaluate the degree of compositional fluctuation in InGaN alloy materials used as active layers in LEDs and laser diodes. However, the fitting function commonly used in this analysis is derived on the basis of some bold approximation, and the analysis can be applied in only limited conditions (e.g. high temperature and small carrier density). In this work, we have established a new theoretical model which can be applied in wide ranges of temperature and carrier density. A measured S-shape behavior in an InGaN quantum-well structure has been analyzed by the theoretical model, and it is shown that the S-shaped behavior can be well fitted by our model in a wide temperature range, compared with the conventional model. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaN-QWｓ / compositional fluctuation / S-Shape / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 333, LQE2017-64, pp. 11-14, Nov. 2017. | |
| Paper # | LQE2017-64 | |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2017-51 CPM2017-94 LQE2017-64 Link to ES Tech. Rep. Archives: ED2017-51 CPM2017-94 LQE2017-64 |
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| Conference Information | |
| Committee | LQE CPM ED |
| Conference Date | 2017-11-30 - 2017-12-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Inst. tech. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Semiconductor Devices, Materials, Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2017-11-LQE-CPM-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells |
| Sub Title (in English) | |
| Keyword(1) | InGaN-QWｓ |
| Keyword(2) | compositional fluctuation |
| Keyword(3) | S-Shape |
| Keyword(4) | |
| Keyword(5) | |
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| 1st Author's Name | Yuma Ikeda |
| 1st Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Tehc.) |
| 2nd Author's Name | Shigeta Sakai |
| 2nd Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Tehc.) |
| 3rd Author's Name | Itsuki Oshima |
| 3rd Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Tehc.) |
| 4th Author's Name | Atsushi A. Yamaguchi |
| 4th Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. of Tehc.) |
| 5th Author's Name | Yuya Kanitani |
| 5th Author's Affiliation | Sony Corporation (Sony) |
| 6th Author's Name | Shigetaka Tomiya |
| 6th Author's Affiliation | Sony Corporation (Sony) |
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| Speaker | Author-1 |
| Date Time | 2017-11-30 14:25:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2017-51, CPM2017-94, LQE2017-64 |
| Volume (vol) | vol.117 |
| Number (no) | no.331(ED), no.332(CPM), no.333(LQE) |
| Page | pp.11-14 |
| #Pages | 4 |
| Date of Issue | 2017-11-23 (ED, CPM, LQE) |
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