Paper Abstract and Keywords |
Presentation |
2017-11-09 13:30
[Invited Talk]
Impurity Diffusion Modeling in SiC Masashi Uematsu (Keio Univ.) SDM2017-64 Link to ES Tech. Rep. Archives: SDM2017-64 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC is an attractive material for the application of high-power electronic devices. In this article, the current status of studies on impurity diffusion modeling in SiC, including on the dopant activation, is reviewed based on the diffusion mechanism governed by point defects, compared with the diffusion in Si and Ge. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Semiconductor Processes / SiC / Impurity Diffusion / Diffusion Modeling / Point Defects / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 290, SDM2017-64, pp. 15-20, Nov. 2017. |
Paper # |
SDM2017-64 |
Date of Issue |
2017-11-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2017-64 Link to ES Tech. Rep. Archives: SDM2017-64 |
Conference Information |
Committee |
SDM |
Conference Date |
2017-11-09 - 2017-11-10 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2017-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Impurity Diffusion Modeling in SiC |
Sub Title (in English) |
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Keyword(1) |
Semiconductor Processes |
Keyword(2) |
SiC |
Keyword(3) |
Impurity Diffusion |
Keyword(4) |
Diffusion Modeling |
Keyword(5) |
Point Defects |
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1st Author's Name |
Masashi Uematsu |
1st Author's Affiliation |
Keio University (Keio Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-11-09 13:30:00 |
Presentation Time |
60 minutes |
Registration for |
SDM |
Paper # |
SDM2017-64 |
Volume (vol) |
vol.117 |
Number (no) |
no.290 |
Page |
pp.15-20 |
#Pages |
6 |
Date of Issue |
2017-11-02 (SDM) |
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