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Paper Abstract and Keywords
Presentation 2017-11-09 15:40
[Invited Talk] GaN MOS capacitance simulation considering deep traps
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 Link to ES Tech. Rep. Archives: SDM2017-66
Abstract (in Japanese) (See Japanese page) 
(in English) Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and is successful to simulate various unideal C-V curves arising from the traps.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / MOS / Device Simulation / trap / capacitance / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 290, SDM2017-66, pp. 27-32, Nov. 2017.
Paper # SDM2017-66 
Date of Issue 2017-11-02 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-66 Link to ES Tech. Rep. Archives: SDM2017-66

Conference Information
Committee SDM  
Conference Date 2017-11-09 - 2017-11-10 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2017-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN MOS capacitance simulation considering deep traps 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) MOS  
Keyword(3) Device Simulation  
Keyword(4) trap  
Keyword(5) capacitance  
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1st Author's Name Koichi Fukuda  
1st Author's Affiliation National Institute of Advanced Inductrial Science and Technology (AIST)
2nd Author's Name Hidehiro Asai  
2nd Author's Affiliation National Institute of Advanced Inductrial Science and Technology (AIST)
3rd Author's Name Junichi Hattori  
3rd Author's Affiliation National Institute of Advanced Inductrial Science and Technology (AIST)
4th Author's Name Mitsuaki Shimizu  
4th Author's Affiliation National Institute of Advanced Inductrial Science and Technology (AIST)
5th Author's Name Tamotsu Hashizume  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker
Date Time 2017-11-09 15:40:00 
Presentation Time 60 
Registration for SDM 
Paper # IEICE-SDM2017-66 
Volume (vol) IEICE-117 
Number (no) no.290 
Page pp.27-32 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2017-11-02 


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