Paper Abstract and Keywords |
Presentation |
2017-11-09 10:00
[Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.) SDM2017-61 Link to ES Tech. Rep. Archives: SDM2017-61 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In conventional GaN growth simulations, it has been believed that tri-methyl-gallium (TMG) first react with ammonia forming adducts. This adducts change into GaN units after complicated reaction in vapor phase and these GaN units adsorb onto substrate. However, our first principles and thermodynamic analysis shows that adduct formation is not main reaction. Moreover, we unify first principles calculations, thermodynamics analysis and fluid dynamic simulations. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / MOVPE growth / First principles calculations / Thermodynamic analysis / Fluid dynamics / Multi-physics simulations / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 290, SDM2017-61, pp. 1-4, Nov. 2017. |
Paper # |
SDM2017-61 |
Date of Issue |
2017-11-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2017-61 Link to ES Tech. Rep. Archives: SDM2017-61 |
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