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Paper Abstract and Keywords
Presentation 2017-10-26 14:00
Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit
Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.) SDM2017-60 Link to ES Tech. Rep. Archives: SDM2017-60
Abstract (in Japanese) (See Japanese page) 
(in English) Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward changes of SF operating conditions such as SF drain current and back bias were analyzed by using high accuracy array test circuit. The influences of SF operating condition that contribute to reduce RTN were clarified by the evaluation of the dependency of SF drain current and back bias to the RTN parameters such as amplitude and time constants. In this work, in addition to statistical analysis by the measurement of a large number of the transistors, we also analyzed the behaviors of RTN parameters in the individual transistors.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS image sensor / in-pixel source follower / random telegraph noise / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 260, SDM2017-60, pp. 57-62, Oct. 2017.
Paper # SDM2017-60 
Date of Issue 2017-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-60 Link to ES Tech. Rep. Archives: SDM2017-60

Conference Information
Committee SDM  
Conference Date 2017-10-25 - 2017-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2017-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit 
Sub Title (in English)  
Keyword(1) CMOS image sensor  
Keyword(2) in-pixel source follower  
Keyword(3) random telegraph noise  
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1st Author's Name Shinya Ichino  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Takezo Mawaki  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Akinobu Teramoto  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Rihito Kuroda  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Shunichi Wakashima  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Shigetoshi Sugawa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2017-10-26 14:00:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2017-60 
Volume (vol) IEICE-117 
Number (no) no.260 
Page pp.57-62 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2017-10-18 


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