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| Presentation | 2017-10-26 14:00 Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.)  SDM2017-60 Link to ES Tech. Rep. Archives: SDM2017-60 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Behaviors of random telegraph noise (RTN) occurs at CMOS image sensors’ in-pixel source follower transistors (SF) toward changes of SF operating conditions such as SF drain current and back bias were analyzed by using high accuracy array test circuit. The influences of SF operating condition that contribute to reduce RTN were clarified by the evaluation of the dependency of SF drain current and back bias to the RTN parameters such as amplitude and time constants. In this work, in addition to statistical analysis by the measurement of a large number of the transistors, we also analyzed the behaviors of RTN parameters in the individual transistors. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | CMOS image sensor / in-pixel source follower / random telegraph noise / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 260, SDM2017-60, pp. 57-62, Oct. 2017. | |
| Paper # | SDM2017-60 | |
| Date of Issue | 2017-10-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-60 Link to ES Tech. Rep. Archives: SDM2017-60 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-10-25 - 2017-10-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit |
| Sub Title (in English) | |
| Keyword(1) | CMOS image sensor |
| Keyword(2) | in-pixel source follower |
| Keyword(3) | random telegraph noise |
| Keyword(4) | |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Shinya Ichino |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Takezo Mawaki |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Akinobu Teramoto |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Rihito Kuroda |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Shunichi Wakashima |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Shigetoshi Sugawa |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2017-10-26 14:00:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2017-60 |
| Volume (vol) | vol.117 |
| Number (no) | no.260 |
| Page | pp.57-62 |
| #Pages | 6 |
| Date of Issue | 2017-10-18 (SDM) |
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