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Paper Abstract and Keywords
Presentation 2017-10-25 14:50
Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51 Link to ES Tech. Rep. Archives: SDM2017-51
Abstract (in Japanese) (See Japanese page) 
(in English) Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size (1×1 µm2, 0.5×0.5 µm2, 0.25×0.25 µm2) were measured with array test circuit. As a result, it was found that the localized large SILC distribution is normalized by SILC defect density, not the gate current density. With the results, SILC defect density per unit gate area on each stress and measurement condition was calculated.
Additionally, the SILC defect density drastically decreased when the Si surface was atomically flattened compared to the conventional samples. These results can be a key to reveal the SILC generation mechanism.
Keyword (in Japanese) (See Japanese page) 
(in English) Stress Induced Leakage Current / Defect Density / Atomically Flattening Process / Si Surface Roughness / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 260, SDM2017-51, pp. 9-14, Oct. 2017.
Paper # SDM2017-51 
Date of Issue 2017-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2017-10-25 - 2017-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2017-10-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process 
Sub Title (in English)  
Keyword(1) Stress Induced Leakage Current  
Keyword(2) Defect Density  
Keyword(3) Atomically Flattening Process  
Keyword(4) Si Surface Roughness  
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1st Author's Name Hyeonwoo Park  
1st Author's Affiliation Tohoku University (Tohoku Univ)
2nd Author's Name Rihito Kuroda  
2nd Author's Affiliation Tohoku University (Tohoku Univ)
3rd Author's Name Tetsuya Goto  
3rd Author's Affiliation Tohoku University (Tohoku Univ)
4th Author's Name Tomoyuki Suwa  
4th Author's Affiliation Tohoku University (Tohoku Univ)
5th Author's Name Akinobu Teramoto  
5th Author's Affiliation Tohoku University (Tohoku Univ)
6th Author's Name Daiki Kimoto  
6th Author's Affiliation Tohoku University (Tohoku Univ)
7th Author's Name Shigetoshi Sugawa  
7th Author's Affiliation Tohoku University (Tohoku Univ)
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Speaker
Date Time 2017-10-25 14:50:00 
Presentation Time 30 
Registration for SDM 
Paper # IEICE-SDM2017-51 
Volume (vol) IEICE-117 
Number (no) no.260 
Page pp.9-14 
#Pages IEICE-6 
Date of Issue IEICE-SDM-2017-10-18 


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