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| Presentation | 2017-10-25 14:00 [Invited Talk] Zero-step-height planarization: Controlling PMD volume before CMP Tomoyasu Kakegawa, Takuya Futase (SanDisk)  SDM2017-50 Link to ES Tech. Rep. Archives: SDM2017-50 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We achieved excellent planarization for a pre-metal dielectric (PMD) layer regardless of its pattern density distribution by making the distribution uniform before chemical mechanical polishing (CMP) without any stopper layer. The distribution control was done by lithography using a checkered reticle on the high-density PMD area followed by etching of the PMD layer to uniformize the CMP rate at both areas. After this planarization, the PMD layer was flattened in the local and global regions. The PMD step-height within chip was approximately 8 nm (approx. 1% of PMD height), which is a variation of less than one tenth compared with conventional planarization, and the non-uniformity of PMD thickness within wafer was approximately 2%. The planarized PMD layer suppressed the defocusing in lithography for contact hole formation on the layer, thus dramatically reducing contact-open failures in a chip of approximately 50 × 110 nm in diameter with 620-nm-high contact holes. The number of defects was one-thousandth that of a conventionally planarized PMD layer. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Atomic force microscopy (AFM) / chemical mechanical polishing (CMP) / contact / density distribution / planarization / pre-metal dielectric (PMD) / voltage contrast(VC) / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 260, SDM2017-50, pp. 1-7, Oct. 2017. | |
| Paper # | SDM2017-50 | |
| Date of Issue | 2017-10-18 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-50 Link to ES Tech. Rep. Archives: SDM2017-50 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-10-25 - 2017-10-26 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Zero-step-height planarization: Controlling PMD volume before CMP |
| Sub Title (in English) | |
| Keyword(1) | Atomic force microscopy (AFM) |
| Keyword(2) | chemical mechanical polishing (CMP) |
| Keyword(3) | contact |
| Keyword(4) | density distribution |
| Keyword(5) | planarization |
| Keyword(6) | pre-metal dielectric (PMD) |
| Keyword(7) | voltage contrast(VC) |
| Keyword(8) | |
| 1st Author's Name | Tomoyasu Kakegawa |
| 1st Author's Affiliation | SanDisk Limited (SanDisk) |
| 2nd Author's Name | Takuya Futase |
| 2nd Author's Affiliation | SanDisk Limited (SanDisk) |
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| Speaker | Author-1 |
| Date Time | 2017-10-25 14:00:00 |
| Presentation Time | 50 minutes |
| Registration for | SDM |
| Paper # | SDM2017-50 |
| Volume (vol) | vol.117 |
| Number (no) | no.260 |
| Page | pp.1-7 |
| #Pages | 7 |
| Date of Issue | 2017-10-18 (SDM) |
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