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Paper Abstract and Keywords
Presentation 2017-09-01 10:40
Temperature dependance of threshold current of membrane DFB/DR lasers using Bragg wavelength detuning
Daisuke Inoue, Kai Fukuda, Takuo Hiratani, Takahiro Tomiyasu, Tatsuya Uryu, Tomohiro Amemiya, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. of Tech.) Link to ES Tech. Rep. Archives: EMD2017-28 CPM2017-49 OPE2017-58 LQE2017-31
Abstract (in Japanese) (See Japanese page) 
(in English) The performance of integrated circuits has proceeded to higher integration density and speed based on scaling law in MOSFETs. However, heat generation and signal delay in the electrical wiring layer became problems that limits the performance. To solve these problems, an on-chip optical interconnection technology was proposed. For this purpose, an ultra-low power consumption laser is required as compared with optical devices deployed in fiber communication systems. We have proposed membrane DFB / DR lasers which consist of a thin semiconductor core layer sandwiched between dielectric cladding layers. In previous works, low threshold current, high output efficiency, and high-speed operation characteristics under a room-temperature continuous-wave condition have been reported. In this paper, the Bragg wavelength detuning design was introduced to the membrane DFB / DR lasers in order to improve lasing characteristics at relatively high temperature range. From the spectrum characteristics, the detuning amount was estimated to be 53 nm for the DFB laser and 45 nm for the DR laser. As the results, more or less temperature insensitive threshold characteristic (20 ° C <T <45 °C) was obtained with the membrane DFB laser, and relatively low threshold current (< 1 mA at 90 °C) was obtained with the membrane DFB laser.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor laser / membrane laser / distributed-feedback laser / distributed-reflector laser / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 195, LQE2017-31, pp. 51-54, Aug. 2017.
Paper # LQE2017-31 
Date of Issue 2017-08-24 (R, EMD, CPM, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Conference Information
Committee R EMD CPM LQE OPE  
Conference Date 2017-08-31 - 2017-09-01 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2017-08-R-EMD-CPM-LQE-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Temperature dependance of threshold current of membrane DFB/DR lasers using Bragg wavelength detuning 
Sub Title (in English)  
Keyword(1) semiconductor laser  
Keyword(2) membrane laser  
Keyword(3) distributed-feedback laser  
Keyword(4) distributed-reflector laser  
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1st Author's Name Daisuke Inoue  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Kai Fukuda  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
3rd Author's Name Takuo Hiratani  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
4th Author's Name Takahiro Tomiyasu  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
5th Author's Name Tatsuya Uryu  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
6th Author's Name Tomohiro Amemiya  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
7th Author's Name Nobuhiko Nishiyama  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
8th Author's Name Shigehisa Arai  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker
Date Time 2017-09-01 10:40:00 
Presentation Time 25 
Registration for LQE 
Paper # IEICE-R2017-34,IEICE-EMD2017-28,IEICE-CPM2017-49,IEICE-OPE2017-58,IEICE-LQE2017-31 
Volume (vol) IEICE-117 
Number (no) no.191(R), no.192(EMD), no.193(CPM), no.194(OPE), no.195(LQE) 
Page pp.51-54 
#Pages IEICE-4 
Date of Issue IEICE-R-2017-08-24,IEICE-EMD-2017-08-24,IEICE-CPM-2017-08-24,IEICE-OPE-2017-08-24,IEICE-LQE-2017-08-24 


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