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| Presentation | 2017-08-31 13:55 Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition Yuki Nara, Syunki Narita, Hideki Nakazawa (Hirosaki Univ.)  R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 Link to ES Tech. Rep. Archives: EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have grown aluminum nitride (AlN) films on 3° off-axis Si(110) substrates by pulsed laser deposition using an AlN target, and formed SiC interfacial buffer layers on the AlN layers by ultralow pressure chemical vapor deposition using monomethylsilane to grow SiC films on the low temperature buffer layers by pulsed laser deposition using a SiC target. We formed the SiC buffer layers under different conditions, and investigated the crystallinity and surface morphology of the SiC films grown on the buffer layers. We successfully grew the SiC film with the lowest surface roughness on the buffer layer formed at a substrate temperature of 500°C, an MMS pressure of 2.0×10^-3 Pa, and a duration time of 5 min. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide / Aluminum nitride / Pulsed laser deposition / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 193, CPM2017-40, pp. 7-10, Aug. 2017. | |
| Paper # | CPM2017-40 | |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2017-25 EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 Link to ES Tech. Rep. Archives: EMD2017-19 CPM2017-40 OPE2017-49 LQE2017-22 |
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| Conference Information | |
| Committee | R EMD CPM LQE OPE |
| Conference Date | 2017-08-31 - 2017-09-01 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2017-08-R-EMD-CPM-LQE-OPE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of SiC on AlN/Si(110) substrates using SiC buffer layer by pulsed laser deposition |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | Aluminum nitride |
| Keyword(3) | Pulsed laser deposition |
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| 1st Author's Name | Yuki Nara |
| 1st Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 2nd Author's Name | Syunki Narita |
| 2nd Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
| 3rd Author's Name | Hideki Nakazawa |
| 3rd Author's Affiliation | Hirosaki University (Hirosaki Univ.) |
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| Speaker | Author-1 |
| Date Time | 2017-08-31 13:55:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | R2017-25, EMD2017-19, CPM2017-40, OPE2017-49, LQE2017-22 |
| Volume (vol) | vol.117 |
| Number (no) | no.191(R), no.192(EMD), no.193(CPM), no.194(OPE), no.195(LQE) |
| Page | pp.7-10 |
| #Pages | 4 |
| Date of Issue | 2017-08-24 (R, EMD, CPM, OPE, LQE) |
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