Paper Abstract and Keywords |
Presentation |
2017-08-09 16:15
Evaluation of ZnO layer of PbS QD/Silicon infrared Photodiode for LSI Akio Higo, Haibin Wang, Takaya Kubo, Naoto Usami, Yuki Okamoto, Kentaro Yamada, Hiroshi Segawa, Masakazu Sugiyama, Yoshio Mita (Univ. of Tokyo) ED2017-30 Link to ES Tech. Rep. Archives: ED2017-30 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In secure life electronics applications, cost effective and wide range infrared photodiode with large scale integration (LSI) are required, but in general, silicon bulk material has no sensitivity in infrared. For realizing the beyond the silicon bandgap, we proposed and fabricated a p-n junction by n-si, n-ZnO and p-PbS colloidal quantum dots for absorption in the infrared region. In this paper, the properties of the ZnO layer were evaluated. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
colloidal quantum dot / PbS / ZnO / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 172, ED2017-30, pp. 23-24, Aug. 2017. |
Paper # |
ED2017-30 |
Date of Issue |
2017-08-02 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2017-30 Link to ES Tech. Rep. Archives: ED2017-30 |
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