Paper Abstract and Keywords |
Presentation |
2017-07-07 16:10
Voltage-Control Spintronics Memory (VoCSM) Altansargai Buyandalai, Hiroaki Yoda, Mariko Shimizu, Tomoaki Inokuchi, Yuichi Ohsawa, Naoharu Shimomura, Satoshi Shirotori, Hideyurki Sugiyama, Yushi Kato, Yuuzo Kamiguchi, Katsuhiko Koi, Soichi Oikawa, Mizue Ishikawa, Yoshiaki Saito, Atsushi Kurobe (Toshiba Corp.) MR2017-16 Link to ES Tech. Rep. Archives: MR2017-16 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We propose a new spintronics-based memory VoCSM (Voltage-control Spintronics Memory) employing the voltage-control-magnetic-anisotropy (VCMA) effect as a bit selecting principle and the spin-Hall effect (SHE) as a writing principle. Considering its advantages such as high density, low energy-consumption, and read disturb mitigation, VoCSM is one of dominant candidates for future nonvolatile main memory. We have fabricated the prototype string structure consist of MTJs with a common electrode, and the writing scheme was successfully demonstrated. Moreover, we have clarified linear relation between writing current and size of VoCSM with a self-aligned heavy-metal electrode. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
VoCSM / MRAM / VCMA / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, July 2017. |
Paper # |
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Date of Issue |
2017-06-30 (MR) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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MR2017-16 Link to ES Tech. Rep. Archives: MR2017-16 |
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