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| Presentation | 2017-06-20 16:50 Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface Koichi Ito, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)  SDM2017-30 Link to ES Tech. Rep. Archives: SDM2017-30 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Two dimensional (2D) honeycomb crystals such as silicene and germanene are currently receiving much attention because of its exceptional electronic properties. We have studied the growth of such 2D crystals using the segregation of Si (or Ge) on the Ag surface by the annealing of Ag/Si(or SiGe, Ge) structure. An Ag(111) layer was epitaxially grown on Si(111), Ge(111), and SiGe(111) substrate by thermal evaporation, and the chemical and thermal stability of Ag surface were systematically evaluated to get the atomically flat Ag surface. After the annealing of Ag/Ge(111) structure at 450℃ in N2 ambience, segration of Ge atoms with an average thickness of bi-layer on the atomically flat Ag surface were observed from the analyses of AFM and HAXPES measurements. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Two Dimensional Crystal / Group-IV Semiconductor / Atomic Force Microscope / X-ray Photoelectron Spectroscopy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 117, no. 101, SDM2017-30, pp. 43-48, June 2017. | |
| Paper # | SDM2017-30 | |
| Date of Issue | 2017-06-13 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2017-30 Link to ES Tech. Rep. Archives: SDM2017-30 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-06-20 - 2017-06-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Campus Innovation Center Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Material Science and Process Technology for MOS Devices and Memories |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of Ultrathin Crystalline Structure of Group-IV Elements on Epitaxial Ag(111) Surface |
| Sub Title (in English) | |
| Keyword(1) | Two Dimensional Crystal |
| Keyword(2) | Group-IV Semiconductor |
| Keyword(3) | Atomic Force Microscope |
| Keyword(4) | X-ray Photoelectron Spectroscopy |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Koichi Ito |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Akio Ohta |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Masashi Kurosawa |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Masaaki Araidai |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Mitsuhisa Ikeda |
| 5th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 6th Author's Name | Katsunori Makihara |
| 6th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Nagoya University (Nagoya Univ.) |
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| Speaker | Author-1 |
| Date Time | 2017-06-20 16:50:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2017-30 |
| Volume (vol) | vol.117 |
| Number (no) | no.101 |
| Page | pp.43-48 |
| #Pages | 6 |
| Date of Issue | 2017-06-13 (SDM) |
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