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Paper Abstract and Keywords
Presentation 2017-06-20 16:10
Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization
Kentaro Matsuura, Takumi Ohashi, Iriya Muneta (Tokyo Tech), Seiya Ishihara (Meiji Univ.), Kuniyuki Kakushima, Kazuo Tsutsui (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Hitoshi Wakabayashi (Tokyo Tech)
Abstract (in Japanese) (See Japanese page) 
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Conference Information
Committee SDM  
Conference Date 2017-06-20 - 2017-06-20 
Place (in Japanese) (See Japanese page) 
Place (in English) Campus Innovation Center Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Material Science and Process Technology for MOS Devices and Memories 
Paper Information
Registration To SDM 
Conference Code 2017-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low-Carrier-Density Sputtered-MoS2 Film by Vapor-Phase- Sulfurization 
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1st Author's Name Kentaro Matsuura  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
2nd Author's Name Takumi Ohashi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
3rd Author's Name Iriya Muneta  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
4th Author's Name Seiya Ishihara  
4th Author's Affiliation Meiji University (Meiji Univ.)
5th Author's Name Kuniyuki Kakushima  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
6th Author's Name Kazuo Tsutsui  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
7th Author's Name Atsushi Ogura  
7th Author's Affiliation Meiji University (Meiji Univ.)
8th Author's Name Hitoshi Wakabayashi  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech)
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Date Time 2017-06-20 16:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper #  
Volume (vol) vol.117 
Number (no) no.101 
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