Paper Abstract and Keywords |
Presentation |
2017-05-26 10:45
N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 Link to ES Tech. Rep. Archives: ED2017-26 CPM2017-12 SDM2017-20 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a potential to realize low ohmic contact resistance on both source and drain due to the electrodes are formed on the top GaN layers, and better carrier confinement due to its natural back barrier. In this work, the N-polar GaN/Al0.32Ga0.68N/GaN heterostructure with a smooth interface has been demonstrated by metalorganic vapor phase epitaxy (MOVPE) grown on a 0.8º off-cut sapphire substrate. To suppress the gate leakage current, a metal-insulator-semiconductor (MIS) gate structure with a 10-nm-thick SiNx insulator layer has been introduced. The gate leakage current has been drastically suppressed by this MIS-HEMT in comparison with a Schottky gate HEMT. As a result, this MIS-HEMT realizes a pinch-off operation with a threshold voltage of -9 V. A prototype N-polar GaN MIS-HEMT also exhibits a promising device characteristic with a maximum current density of over 500 mA/mm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium Nitride (GaN) / N-polarity / metalorganic vapor phase epitaxy (MOVPE) / metal-insulator-semiconductor (MIS) / high electron mobility transistor (HEMT) / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 58, ED2017-26, pp. 59-64, May 2017. |
Paper # |
ED2017-26 |
Date of Issue |
2017-05-18 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-26 CPM2017-12 SDM2017-20 Link to ES Tech. Rep. Archives: ED2017-26 CPM2017-12 SDM2017-20 |
|