IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-05-26 09:55
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions
Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18 Link to ES Tech. Rep. Archives: ED2017-24 CPM2017-10 SDM2017-18
Abstract (in Japanese) (See Japanese page) 
(in English) Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photocatalysts, the method of controlling the speed is not well established. In this study, we aimed to establish a surface control method in SiC by measuring the surface recombination velocity of 4H-SiC in aqueous solution. As a result, the surface recombination of the 4H-SiC (0001) Si-face is suppressed in the acidic aqueous solution.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / surface recombination / aqueous solution / / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 58, ED2017-24, pp. 51-54, May 2017.
Paper # ED2017-24 
Date of Issue 2017-05-18 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-24 CPM2017-10 SDM2017-18 Link to ES Tech. Rep. Archives: ED2017-24 CPM2017-10 SDM2017-18

Conference Information
Committee SDM ED CPM  
Conference Date 2017-05-25 - 2017-05-26 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2017-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) surface recombination  
Keyword(3) aqueous solution  
1st Author's Name Masashi Kato  
1st Author's Affiliation Nagoya Institute of Technology (NITech)
2nd Author's Name Yoshihito Ichikawa  
2nd Author's Affiliation Nagoya Institute of Technology (NITech)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (NITech)
4th Author's Name Tsunenobu Kimoto  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Date Time 2017-05-26 09:55:00 
Presentation Time 25 
Registration for ED 
Paper # IEICE-ED2017-24,IEICE-CPM2017-10,IEICE-SDM2017-18 
Volume (vol) IEICE-117 
Number (no) no.58(ED), no.59(CPM), no.60(SDM) 
Page pp.51-54 
#Pages IEICE-4 
Date of Issue IEICE-ED-2017-05-18,IEICE-CPM-2017-05-18,IEICE-SDM-2017-05-18 

[Return to Top Page]

[Return to IEICE Web Page]

The Institute of Electronics, Information and Communication Engineers (IEICE), Japan