Paper Abstract and Keywords |
Presentation |
2017-05-26 09:55
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions Masashi Kato, Yoshihito Ichikawa, Masaya Ichimura (NITech), Tsunenobu Kimoto (Kyoto Univ.) ED2017-24 CPM2017-10 SDM2017-18 Link to ES Tech. Rep. Archives: ED2017-24 CPM2017-10 SDM2017-18 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Although surface recombination is one of the factors that affects the performance of bipolar SiC devices and SiC photocatalysts, the method of controlling the speed is not well established. In this study, we aimed to establish a surface control method in SiC by measuring the surface recombination velocity of 4H-SiC in aqueous solution. As a result, the surface recombination of the 4H-SiC (0001) Si-face is suppressed in the acidic aqueous solution. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SiC / surface recombination / aqueous solution / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 58, ED2017-24, pp. 51-54, May 2017. |
Paper # |
ED2017-24 |
Date of Issue |
2017-05-18 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2017-24 CPM2017-10 SDM2017-18 Link to ES Tech. Rep. Archives: ED2017-24 CPM2017-10 SDM2017-18 |
Conference Information |
Committee |
SDM ED CPM |
Conference Date |
2017-05-25 - 2017-05-26 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
VBL, Nagoya University |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2017-05-SDM-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Suppression of surface recombination at the 4H-SiC (0001) Si-face by immersing aqueous solutions |
Sub Title (in English) |
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Keyword(1) |
SiC |
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surface recombination |
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aqueous solution |
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1st Author's Name |
Masashi Kato |
1st Author's Affiliation |
Nagoya Institute of Technology (NITech) |
2nd Author's Name |
Yoshihito Ichikawa |
2nd Author's Affiliation |
Nagoya Institute of Technology (NITech) |
3rd Author's Name |
Masaya Ichimura |
3rd Author's Affiliation |
Nagoya Institute of Technology (NITech) |
4th Author's Name |
Tsunenobu Kimoto |
4th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-05-26 09:55:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2017-24, CPM2017-10, SDM2017-18 |
Volume (vol) |
vol.117 |
Number (no) |
no.58(ED), no.59(CPM), no.60(SDM) |
Page |
pp.51-54 |
#Pages |
4 |
Date of Issue |
2017-05-18 (ED, CPM, SDM) |
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