Paper Abstract and Keywords |
Presentation |
2017-04-20 13:00
Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare Hiroki Utsumi, Taisei Sasaki, Shunya Sekiguchi, Shoya Takeuchi, Akito Hara (Tohoku Gakuin Univ.) SDM2017-1 OME2017-1 Link to ES Tech. Rep. Archives: SDM2017-1 OME2017-1 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Flexible devices and wearable devices are receiving more attention due to their contributions in realizing the Internet of Things and the Trillion Sensor Society. The fabrication of electronic systems and sensors on plastic substrates is necessary to realize the objectives of the society. In this paper, we demonstrate a four-terminal (4T) poly-Ge thin-film transistor fabricated at a temperature of 300 °C on a glass substrate. We used three key technologies: a self-aligned planar metal double-gate structure to reduce the off-current; metal induced crystallization using copper to fabricate the poly-Ge film at 300 °C; and aluminum induced lateral metallization source drain (Al-LM-SD) at 300 °C to achieve a low resistance metallic-like SD. The successful operations of the 4T structures was confirmed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
TFT / Germanium / Ge / poly-Ge / MIC / Cu-MIC / four terminal / double gate |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 7, SDM2017-1, pp. 1-4, April 2017. |
Paper # |
SDM2017-1 |
Date of Issue |
2017-04-13 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2017-1 OME2017-1 Link to ES Tech. Rep. Archives: SDM2017-1 OME2017-1 |
Conference Information |
Committee |
OME SDM |
Conference Date |
2017-04-20 - 2017-04-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tatsugochou Shougaigakushuu Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc |
Paper Information |
Registration To |
SDM |
Conference Code |
2017-04-OME-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Self-aligned four-terminal Cu-MIC poly-Ge TFTs fabricated at 300℃ on Glass Substare |
Sub Title (in English) |
|
Keyword(1) |
TFT |
Keyword(2) |
Germanium |
Keyword(3) |
Ge |
Keyword(4) |
poly-Ge |
Keyword(5) |
MIC |
Keyword(6) |
Cu-MIC |
Keyword(7) |
four terminal |
Keyword(8) |
double gate |
1st Author's Name |
Hiroki Utsumi |
1st Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
2nd Author's Name |
Taisei Sasaki |
2nd Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
3rd Author's Name |
Shunya Sekiguchi |
3rd Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
4th Author's Name |
Shoya Takeuchi |
4th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
5th Author's Name |
Akito Hara |
5th Author's Affiliation |
Tohoku Gakuin University (Tohoku Gakuin Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-04-20 13:00:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2017-1, OME2017-1 |
Volume (vol) |
vol.117 |
Number (no) |
no.7(SDM), no.8(OME) |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2017-04-13 (SDM, OME) |
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