IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2017-04-20 16:45
A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator
Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4 Link to ES Tech. Rep. Archives: SDM2017-4 OME2017-4
Abstract (in Japanese) (See Japanese page) 
(in English) High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effect transistor (OFET) utilizing pentacene, ruburene, and other materials. However, the device scaling and integration are the issues for the OFETs because of the difficulties to use lithography process. In this paper, we have investigated amorphous rubrene (a-rubrene) gate insulator, which is able to be evaporated, and in-situ deposition of a-rubrene/pentacene stack structure to fabricate top-gate type OFETs utilizing lithography process for the single organic semiconductor CMOS applications. Furthermore, fabrication of top-gate type ferroelectric gate OFET (FeFET) utilizing organic ferroelectrics of croconic acid thin films.
Keyword (in Japanese) (See Japanese page) 
(in English) amorphous rubrene / pentacene / croconic acid / top-gate type / lithography / OFET / FeFET / CMOS  
Reference Info. IEICE Tech. Rep., vol. 117, no. 8, OME2017-4, pp. 15-18, April 2017.
Paper # OME2017-4 
Date of Issue 2017-04-13 (SDM, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2017-4 OME2017-4 Link to ES Tech. Rep. Archives: SDM2017-4 OME2017-4

Conference Information
Committee OME SDM  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tatsugochou Shougaigakushuu Center 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc 
Paper Information
Registration To OME 
Conference Code 2017-04-OME-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator 
Sub Title (in English)  
Keyword(1) amorphous rubrene  
Keyword(2) pentacene  
Keyword(3) croconic acid  
Keyword(4) top-gate type  
Keyword(5) lithography  
Keyword(6) OFET  
Keyword(7) FeFET  
Keyword(8) CMOS  
1st Author's Name Shun-ichiro Ohmi  
1st Author's Affiliation Tokyo Institute of Technoogy (Tokyo Tech)
2nd Author's Name Mizuha Hiroki  
2nd Author's Affiliation Tokyo Institute of Technoogy (Tokyo Tech)
3rd Author's Name Hongli Zhang  
3rd Author's Affiliation Tokyo Institute of Technoogy (Tokyo Tech)
4th Author's Name Yasutaka Maeda  
4th Author's Affiliation Tokyo Institute of Technoogy (Tokyo Tech)
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2017-04-20 16:45:00 
Presentation Time 45 minutes 
Registration for OME 
Paper # SDM2017-4, OME2017-4 
Volume (vol) vol.117 
Number (no) no.7(SDM), no.8(OME) 
Page pp.15-18 
#Pages
Date of Issue 2017-04-13 (SDM, OME) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan