Paper Abstract and Keywords |
Presentation |
2017-04-20 16:45
A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator Shun-ichiro Ohmi, Mizuha Hiroki, Hongli Zhang, Yasutaka Maeda (Tokyo Tech) SDM2017-4 OME2017-4 Link to ES Tech. Rep. Archives: SDM2017-4 OME2017-4 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
High hole mobility, higher than that of amorphous-Si (a-Si), has been reported for the organic semiconductor field-effect transistor (OFET) utilizing pentacene, ruburene, and other materials. However, the device scaling and integration are the issues for the OFETs because of the difficulties to use lithography process. In this paper, we have investigated amorphous rubrene (a-rubrene) gate insulator, which is able to be evaporated, and in-situ deposition of a-rubrene/pentacene stack structure to fabricate top-gate type OFETs utilizing lithography process for the single organic semiconductor CMOS applications. Furthermore, fabrication of top-gate type ferroelectric gate OFET (FeFET) utilizing organic ferroelectrics of croconic acid thin films. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
amorphous rubrene / pentacene / croconic acid / top-gate type / lithography / OFET / FeFET / CMOS |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 8, OME2017-4, pp. 15-18, April 2017. |
Paper # |
OME2017-4 |
Date of Issue |
2017-04-13 (SDM, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2017-4 OME2017-4 Link to ES Tech. Rep. Archives: SDM2017-4 OME2017-4 |
Conference Information |
Committee |
OME SDM |
Conference Date |
2017-04-20 - 2017-04-21 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tatsugochou Shougaigakushuu Center |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Organic molecular devices, silicon device, biotechnology, thin film device, novel material, evaluation method, etc |
Paper Information |
Registration To |
OME |
Conference Code |
2017-04-OME-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Study on Top-Gate Type OFETs utilizing Amorphous Rubrene Gate Insulator |
Sub Title (in English) |
|
Keyword(1) |
amorphous rubrene |
Keyword(2) |
pentacene |
Keyword(3) |
croconic acid |
Keyword(4) |
top-gate type |
Keyword(5) |
lithography |
Keyword(6) |
OFET |
Keyword(7) |
FeFET |
Keyword(8) |
CMOS |
1st Author's Name |
Shun-ichiro Ohmi |
1st Author's Affiliation |
Tokyo Institute of Technoogy (Tokyo Tech) |
2nd Author's Name |
Mizuha Hiroki |
2nd Author's Affiliation |
Tokyo Institute of Technoogy (Tokyo Tech) |
3rd Author's Name |
Hongli Zhang |
3rd Author's Affiliation |
Tokyo Institute of Technoogy (Tokyo Tech) |
4th Author's Name |
Yasutaka Maeda |
4th Author's Affiliation |
Tokyo Institute of Technoogy (Tokyo Tech) |
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Speaker |
Author-1 |
Date Time |
2017-04-20 16:45:00 |
Presentation Time |
45 minutes |
Registration for |
OME |
Paper # |
SDM2017-4, OME2017-4 |
Volume (vol) |
vol.117 |
Number (no) |
no.7(SDM), no.8(OME) |
Page |
pp.15-18 |
#Pages |
4 |
Date of Issue |
2017-04-13 (SDM, OME) |
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