Paper Abstract and Keywords |
Presentation |
2017-04-20 15:25
Fabrication of SnO2 film using room temperature atomic layer deposition Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5 Link to ES Tech. Rep. Archives: ED2017-5 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteristics due to the particle size distribution tend to occur and rate of change of depletion layer to particle size is small.
We have examined the fabrication of thin film type gas sensor with excellent integration by atomic layer deposition method.
SnO2 room atomic layer deposition process was investigated by multiple internal reflection infrared absorption spectroscopy (MIR-IRAS).
Also, it was confirmed by X-ray photoelectron spectroscopy that the film was in state of SnO2, and the growth rate of 0.025nm/cycle was calculated.
In addition, as device application, we fabricated a field effect transistor (FET) with the SnO2 film as a channel, confirmed the trend of output characteristics of FET. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Atomic Layer Deposition / Plasma-excited H2O and O2 / MIR-IRAS / SnO2 / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 117, no. 6, ED2017-5, pp. 17-20, April 2017. |
Paper # |
ED2017-5 |
Date of Issue |
2017-04-13 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2017-5 Link to ES Tech. Rep. Archives: ED2017-5 |
Conference Information |
Committee |
ED |
Conference Date |
2017-04-20 - 2017-04-21 |
Place (in Japanese) |
(See Japanese page) |
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Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ED |
Conference Code |
2017-04-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Fabrication of SnO2 film using room temperature atomic layer deposition |
Sub Title (in English) |
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Keyword(1) |
Atomic Layer Deposition |
Keyword(2) |
Plasma-excited H2O and O2 |
Keyword(3) |
MIR-IRAS |
Keyword(4) |
SnO2 |
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1st Author's Name |
Syunsuke Saito |
1st Author's Affiliation |
Yamagata University (Yamagata Univ.) |
2nd Author's Name |
Kentaro Tokoro |
2nd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
3rd Author's Name |
Kensaku Kanomata |
3rd Author's Affiliation |
Yamagata University (Yamagata Univ.) |
4th Author's Name |
Masanori Miura |
4th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
5th Author's Name |
Bashir Ahmmad |
5th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
6th Author's Name |
Shigeru Kubota |
6th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
7th Author's Name |
Fumihiko Hirose |
7th Author's Affiliation |
Yamagata University (Yamagata Univ.) |
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Speaker |
Author-1 |
Date Time |
2017-04-20 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2017-5 |
Volume (vol) |
vol.117 |
Number (no) |
no.6 |
Page |
pp.17-20 |
#Pages |
4 |
Date of Issue |
2017-04-13 (ED) |
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