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Presentation 2017-04-20 15:25
Fabrication of SnO2 film using room temperature atomic layer deposition
Syunsuke Saito, Kentaro Tokoro, Kensaku Kanomata, Masanori Miura, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.) ED2017-5 Link to ES Tech. Rep. Archives: ED2017-5
Abstract (in Japanese) (See Japanese page) 
(in English) Since most of the gas sensors using tin oxide (SnO2) are sintered type, there is a problem that variations in characteristics due to the particle size distribution tend to occur and rate of change of depletion layer to particle size is small.
We have examined the fabrication of thin film type gas sensor with excellent integration by atomic layer deposition method.
SnO2 room atomic layer deposition process was investigated by multiple internal reflection infrared absorption spectroscopy (MIR-IRAS).
Also, it was confirmed by X-ray photoelectron spectroscopy that the film was in state of SnO2, and the growth rate of 0.025nm/cycle was calculated.
In addition, as device application, we fabricated a field effect transistor (FET) with the SnO2 film as a channel, confirmed the trend of output characteristics of FET.
Keyword (in Japanese) (See Japanese page) 
(in English) Atomic Layer Deposition / Plasma-excited H2O and O2 / MIR-IRAS / SnO2 / / / /  
Reference Info. IEICE Tech. Rep., vol. 117, no. 6, ED2017-5, pp. 17-20, April 2017.
Paper # ED2017-5 
Date of Issue 2017-04-13 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2017-5 Link to ES Tech. Rep. Archives: ED2017-5

Conference Information
Committee ED  
Conference Date 2017-04-20 - 2017-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English)  
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Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2017-04-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of SnO2 film using room temperature atomic layer deposition 
Sub Title (in English)  
Keyword(1) Atomic Layer Deposition  
Keyword(2) Plasma-excited H2O and O2  
Keyword(3) MIR-IRAS  
Keyword(4) SnO2  
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1st Author's Name Syunsuke Saito  
1st Author's Affiliation Yamagata University (Yamagata Univ.)
2nd Author's Name Kentaro Tokoro  
2nd Author's Affiliation Yamagata University (Yamagata Univ.)
3rd Author's Name Kensaku Kanomata  
3rd Author's Affiliation Yamagata University (Yamagata Univ.)
4th Author's Name Masanori Miura  
4th Author's Affiliation Yamagata University (Yamagata Univ.)
5th Author's Name Bashir Ahmmad  
5th Author's Affiliation Yamagata University (Yamagata Univ.)
6th Author's Name Shigeru Kubota  
6th Author's Affiliation Yamagata University (Yamagata Univ.)
7th Author's Name Fumihiko Hirose  
7th Author's Affiliation Yamagata University (Yamagata Univ.)
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Speaker Author-1 
Date Time 2017-04-20 15:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2017-5 
Volume (vol) vol.117 
Number (no) no.6 
Page pp.17-20 
#Pages
Date of Issue 2017-04-13 (ED) 


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