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Paper Abstract and Keywords
Presentation 2017-02-24 10:00
Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 Link to ES Tech. Rep. Archives: ED2016-130 SDM2016-147
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information processing. Here, we demonstrate a triple-quantum-dot (TQD) device fabricated by the pattern-dependent oxidation of a silicon nanowire and an additional oxidation of the nanowire through the gaps between three fine gate electrodes attached on the nanowire. This fabrication method is suitable for the integrated multiple quantum dot device because each quantum dot forms just under each fine gate. In addition, we propose and demonstrate a simultaneous gate-voltage sweeping method for a gate-capacitance evaluation of compact TQD devices with reduced gate distances.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon single-electron device / triple quantum dot / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 471, ED2016-130, pp. 1-6, Feb. 2017.
Paper # ED2016-130 
Date of Issue 2017-02-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-130 SDM2016-147 Link to ES Tech. Rep. Archives: ED2016-130 SDM2016-147

Conference Information
Committee ED SDM  
Conference Date 2017-02-24 - 2017-02-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2017-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and evaluation of silicon triple quantum dots with a compact device structure 
Sub Title (in English)  
Keyword(1) silicon single-electron device  
Keyword(2) triple quantum dot  
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1st Author's Name Takafumi Uchida  
1st Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University (IST. Hokkaido Univ.)
2nd Author's Name Atsushi Tsurumaki-Fukuchi  
2nd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University (IST. Hokkaido Univ.)
3rd Author's Name Masashi Arita  
3rd Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University (IST. Hokkaido Univ.)
4th Author's Name Akira Fujiwara  
4th Author's Affiliation NTT Basic Research Laboratories, NTT Corporation (NTT BRL)
5th Author's Name Yasuo Takahashi  
5th Author's Affiliation Graduate School of Information Science and Technology, Hokkaido University (IST. Hokkaido Univ.)
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Speaker Author-1 
Date Time 2017-02-24 10:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-130, SDM2016-147 
Volume (vol) vol.116 
Number (no) no.471(ED), no.472(SDM) 
Page pp.1-6 
#Pages
Date of Issue 2017-02-17 (ED, SDM) 


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