Paper Abstract and Keywords |
Presentation |
2017-02-24 10:50
Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149 Link to ES Tech. Rep. Archives: ED2016-132 SDM2016-149 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.37 eV. ZnO is also one of the most attracted attention semiconductor material for the next generation display TFTs. ZnO films and its TFT applications have high adaptability to various fabrication processes. In this study, we report on fabrication and characterization of AZO multi-layer thin-film transistors using AZO thin film buffers by a solution method toward the development of high-performance TFT. On the other hand, nanoimprint lithography is attracting much interest from many industrial fields because it can provide various nanostructures. Imprinted pattern with an AZO gel thin film were obtained by a thermal nanoimprint method. These results also were reported in detail for the direct patterning by a thermal nanoimprint process. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Solution Method / Zinc Oxide / Thin Film Transistors / Nanoimprint Method / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 471, ED2016-132, pp. 13-16, Feb. 2017. |
Paper # |
ED2016-132 |
Date of Issue |
2017-02-17 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2016-132 SDM2016-149 Link to ES Tech. Rep. Archives: ED2016-132 SDM2016-149 |
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