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Paper Abstract and Keywords
Presentation 2017-02-24 10:50
Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method
Fumiya Kimura, Alhanaki Abdullah, Yi Sun, Shota Sasaki, Koki Nagayama, Masatoshi Koyama, Toshihiko Maemoto, Shigehiko Sasa (OIT) ED2016-132 SDM2016-149 Link to ES Tech. Rep. Archives: ED2016-132 SDM2016-149
Abstract (in Japanese) (See Japanese page) 
(in English) Zinc oxide (ZnO) is transparent semiconductor material in visible light wavelength because it has band gap energy of 3.37 eV. ZnO is also one of the most attracted attention semiconductor material for the next generation display TFTs. ZnO films and its TFT applications have high adaptability to various fabrication processes. In this study, we report on fabrication and characterization of AZO multi-layer thin-film transistors using AZO thin film buffers by a solution method toward the development of high-performance TFT. On the other hand, nanoimprint lithography is attracting much interest from many industrial fields because it can provide various nanostructures. Imprinted pattern with an AZO gel thin film were obtained by a thermal nanoimprint method. These results also were reported in detail for the direct patterning by a thermal nanoimprint process.
Keyword (in Japanese) (See Japanese page) 
(in English) Solution Method / Zinc Oxide / Thin Film Transistors / Nanoimprint Method / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 471, ED2016-132, pp. 13-16, Feb. 2017.
Paper # ED2016-132 
Date of Issue 2017-02-17 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-132 SDM2016-149 Link to ES Tech. Rep. Archives: ED2016-132 SDM2016-149

Conference Information
Committee ED SDM  
Conference Date 2017-02-24 - 2017-02-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Centennial Hall, Hokkaido Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Functional nanodevices and related technologies 
Paper Information
Registration To ED 
Conference Code 2017-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication of Zinc Oxide-based Thin Films Transistors by a Solution Process and a Direct Patterning of Oxide Thin Films by a Thermal Nanoimprint Method 
Sub Title (in English)  
Keyword(1) Solution Method  
Keyword(2) Zinc Oxide  
Keyword(3) Thin Film Transistors  
Keyword(4) Nanoimprint Method  
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1st Author's Name Fumiya Kimura  
1st Author's Affiliation Osaka Institute of Technology (OIT)
2nd Author's Name Alhanaki Abdullah  
2nd Author's Affiliation Osaka Institute of Technology (OIT)
3rd Author's Name Yi Sun  
3rd Author's Affiliation Osaka Institute of Technology (OIT)
4th Author's Name Shota Sasaki  
4th Author's Affiliation Osaka Institute of Technology (OIT)
5th Author's Name Koki Nagayama  
5th Author's Affiliation Osaka Institute of Technology (OIT)
6th Author's Name Masatoshi Koyama  
6th Author's Affiliation Osaka Institute of Technology (OIT)
7th Author's Name Toshihiko Maemoto  
7th Author's Affiliation Osaka Institute of Technology (OIT)
8th Author's Name Shigehiko Sasa  
8th Author's Affiliation Osaka Institute of Technology (OIT)
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Speaker Author-1 
Date Time 2017-02-24 10:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-132, SDM2016-149 
Volume (vol) vol.116 
Number (no) no.471(ED), no.472(SDM) 
Page pp.13-16 
#Pages
Date of Issue 2017-02-17 (ED, SDM) 


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