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| Presentation | 2017-02-06 10:05 [Invited Talk] Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure Masako Kodera, Hiroyuki Yano, Naoto Miyashita (Toshiba)  SDM2016-139 Link to ES Tech. Rep. Archives: SDM2016-139 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We evaluated the impact of process damage caused by dry or sputtering on chemical mechanical planarization (CMP) with Cu/low-k structures. We revealed that dry process drastically decreased C-H/C-C bonding in low-k films, and CMP mechanism of the low-k film was completely different between with and without dry processing. Although CMP slurry for low-k films usually contains surfactant to promote CMP removal rate of hydrophobic low-k surface, the C-H/C-C decrease of the low-k film significantly changes the absorption model of the surfactant. Moreover, during fabrication of Cu wiring, carbon missing inhomogeneously occurs within the low-k film. Thus, slurry design considering C-H/C-C missing in low-k films is a clue for successful fabrication. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | low-k / Cu / CMP / Dry etch / damage / surfactant / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 450, SDM2016-139, pp. 1-4, Feb. 2017. | |
| Paper # | SDM2016-139 | |
| Date of Issue | 2017-01-30 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-139 Link to ES Tech. Rep. Archives: SDM2016-139 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2017-02-06 - 2017-02-06 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tokyo Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Interconnects, Package and related materials |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2017-02-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Dry Process Damage on Chemical Mechanical Planarization with Cu/low-k Structure |
| Sub Title (in English) | |
| Keyword(1) | low-k |
| Keyword(2) | Cu |
| Keyword(3) | CMP |
| Keyword(4) | Dry etch |
| Keyword(5) | damage |
| Keyword(6) | surfactant |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masako Kodera |
| 1st Author's Affiliation | Toshiba Corp. (Toshiba) |
| 2nd Author's Name | Hiroyuki Yano |
| 2nd Author's Affiliation | Toshiba Corp. (Toshiba) |
| 3rd Author's Name | Naoto Miyashita |
| 3rd Author's Affiliation | Toshiba Corp. (Toshiba) |
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| Speaker | Author-1 |
| Date Time | 2017-02-06 10:05:00 |
| Presentation Time | 35 minutes |
| Registration for | SDM |
| Paper # | SDM2016-139 |
| Volume (vol) | vol.116 |
| Number (no) | no.450 |
| Page | pp.1-4 |
| #Pages | 4 |
| Date of Issue | 2017-01-30 (SDM) |
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