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Paper Abstract and Keywords
Presentation 2017-02-06 16:10
[Invited Talk] Direct Cu metallization on TGV Glass substrate using Wet Process.
Kotoku Inoue, Masatoshi Takayama, Tsubasa Fujimura, Shigeo Onitake (Koto) SDM2016-146 Link to ES Tech. Rep. Archives: SDM2016-146
Abstract (in Japanese) (See Japanese page) 
(in English) It is believed that conformal metallization or via filling on glass with the highly conductive thick Cu material is expected to enhance the performance for RF electronic devices in the IoT era due to the outstanding RF properties of the glass and high-Q nature of Cu metallization. Previously, metallization on the glass with sputtering and printing technology has been demonstrated. However, there are some concerns in terms of throughput and mechanical integrity of sputter seed layer for Cu metallization on TGV (thru-glass via) sidewalls and the smooth glass surfaces. This study reports our novel metallization technology to obtain good adhesion without degrading the RF performance associated with glass properties and Cu conductivity. Metal circuits including high-Q RF inductors were created without roughening the surface of glass substrate by wet plating process with subtractive process. Surface cleaning is critical to obtain good adhesion. In this experiment, glass surface was cleaned by the irradiation of UV light and alkaline degreasing with complex agent. UV light and alkaline degreasing make the surface of the glass clean and the Cu adhesion to glass improve with minimal stress to the glass itself. We have successfully demonstrated direct cupper plating on TGV holes with filling via and conformal plating for RF front end filters with better performance (Cu – glass adhesion 0.4kN/m). This technology is further optimized for high-performance RF standalone passive network and RF interposers with the capability of thick (15um) Cu plating directly on TGV glass for the first time in 300mm x 400mm x 0.4mm thick panel format, targeting low-cost and high-throughput TGV metallization.
Keyword (in Japanese) (See Japanese page) 
(in English) Glass / Cu plating / Through glass via hole / TGV / Direct Cu plating on glass / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 450, SDM2016-146, pp. 41-44, Feb. 2017.
Paper # SDM2016-146 
Date of Issue 2017-01-30 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-146 Link to ES Tech. Rep. Archives: SDM2016-146

Conference Information
Committee SDM  
Conference Date 2017-02-06 - 2017-02-06 
Place (in Japanese) (See Japanese page) 
Place (in English) Tokyo Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Interconnects, Package and related materials 
Paper Information
Registration To SDM 
Conference Code 2017-02-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Direct Cu metallization on TGV Glass substrate using Wet Process. 
Sub Title (in English)  
Keyword(1) Glass  
Keyword(2) Cu plating  
Keyword(3) Through glass via hole  
Keyword(4) TGV  
Keyword(5) Direct Cu plating on glass  
1st Author's Name Kotoku Inoue  
1st Author's Affiliation Koto electric co.,Ltd. (Koto)
2nd Author's Name Masatoshi Takayama  
2nd Author's Affiliation Koto electric co.,Ltd. (Koto)
3rd Author's Name Tsubasa Fujimura  
3rd Author's Affiliation Koto electric co.,Ltd. (Koto)
4th Author's Name Shigeo Onitake  
4th Author's Affiliation Koto electric co.,Ltd. (Koto)
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Date Time 2017-02-06 16:10:00 
Presentation Time 35 
Registration for SDM 
Paper # IEICE-SDM2016-146 
Volume (vol) IEICE-116 
Number (no) no.450 
Page pp.41-44 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2017-01-30 

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