Paper Abstract and Keywords |
Presentation |
2017-01-31 15:25
A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry Yuichiro Ishii, Makoto Yabuuchi, Yohei Sawada, Masao Morimoto, Yasumasa Tsukamoto (Renesas Electronics), Yuta Yoshida, Ken Shibata, Toshiaki Sano (Renesas System Design), Shinji Tanaka, Koji Nii (Renesas Electronics) EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98 Link to ES Tech. Rep. Archives: EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We propose pseudo dual-port (DP) SRAM by using 6T single-port (SP) SRAM bitcell with double pumping circuitry, which enables 2-read/write (2RW) operation within a clock cycle. We designed and implemented a 512-kb pseudo DP SRAM macro based on 28-nm low-power bulk CMOS technology. Our design achieved the bit density of 5.92 Mb/mm2, which is the highest ever reported. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Pseudo / DP / 2RW / SRAM / 28nm / Double pumping / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 446, ICD2016-117, pp. 87-92, Jan. 2017. |
Paper # |
ICD2016-117 |
Date of Issue |
2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98 Link to ES Tech. Rep. Archives: EMD2016-86 MR2016-58 SCE2016-64 EID2016-65 ED2016-129 CPM2016-130 SDM2016-129 ICD2016-117 OME2016-98 |
Conference Information |
Committee |
ICD CPM ED EID EMD MRIS OME SCE |
Conference Date |
2017-01-30 - 2017-01-31 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Miyajima-Morino-Yado(Hiroshima) |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Circuit, Device and Engineering Science |
Paper Information |
Registration To |
ICD |
Conference Code |
2017-01-ICD-CPM-ED-EID-EMD-MR-OME-SCE-SDM-QIT |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A 5.92-Mb/mm2 28-nm Pseudo 2-Read/Write Dual-Port SRAM Using Double Pumping Circuitry |
Sub Title (in English) |
|
Keyword(1) |
Pseudo |
Keyword(2) |
DP |
Keyword(3) |
2RW |
Keyword(4) |
SRAM |
Keyword(5) |
28nm |
Keyword(6) |
Double pumping |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yuichiro Ishii |
1st Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
2nd Author's Name |
Makoto Yabuuchi |
2nd Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
3rd Author's Name |
Yohei Sawada |
3rd Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
4th Author's Name |
Masao Morimoto |
4th Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
5th Author's Name |
Yasumasa Tsukamoto |
5th Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
6th Author's Name |
Yuta Yoshida |
6th Author's Affiliation |
Renesas System Design Co., Ltd. (Renesas System Design) |
7th Author's Name |
Ken Shibata |
7th Author's Affiliation |
Renesas System Design Co., Ltd. (Renesas System Design) |
8th Author's Name |
Toshiaki Sano |
8th Author's Affiliation |
Renesas System Design Co., Ltd. (Renesas System Design) |
9th Author's Name |
Shinji Tanaka |
9th Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
10th Author's Name |
Koji Nii |
10th Author's Affiliation |
Renesas Electronics Corporation (Renesas Electronics) |
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Speaker |
Author-1 |
Date Time |
2017-01-31 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
ICD |
Paper # |
EMD2016-86, MR2016-58, SCE2016-64, EID2016-65, ED2016-129, CPM2016-130, SDM2016-129, ICD2016-117, OME2016-98 |
Volume (vol) |
vol.116 |
Number (no) |
no.439(EMD), no.440(MR), no.441(SCE), no.442(EID), no.443(ED), no.444(CPM), no.445(SDM), no.446(ICD), no.447(OME) |
Page |
pp.87-92 |
#Pages |
6 |
Date of Issue |
2017-01-23 (EMD, MR, SCE, EID, ED, CPM, SDM, ICD, OME) |
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