Paper Abstract and Keywords |
Presentation |
2017-01-30 10:00
[Invited Talk]
Demonstrating Performance Improvement of Complementary TFET Circuits by ION Enhancement Based on Isoelectronic Trap Technology Takahiro Mori, Hidehiro Asai, Junichi Hattori, Koichi Fukuda, Shintaro Otsuka, Yukinori Morita, Shin-ichi O'uchi, Hiroshi Fuketa, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota, Takashi Matuskawa (ANational Institute of Advanced Industrial ScieIST) SDM2016-130 Link to ES Tech. Rep. Archives: SDM2016-130 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We improved the performance of a complementary circuit comprising Si-based tunnel field-effect transistors (TFETs) by using isoelectronic trap (IET) technology. IET technology was found to increase the ON current (ION) 5 times in P-TFETs and 2 times in N-TFETs. The ION enhancement improved the inverter performance. In addition, ring oscillator (RO) circuit operation with the complementary TFET inverters was experimentally demonstrated for the first time. The RO circuit with IET-TFETs exhibited a higher operation frequency than that with conventional TFETs. IET technology provides a breakthrough towards realizing complementary circuits with Si-TFETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Tunnel Field-Effect Transistor / Isoelectronic Trap / Complementary Integrated Circuit / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 448, SDM2016-130, pp. 1-4, Jan. 2017. |
Paper # |
SDM2016-130 |
Date of Issue |
2017-01-23 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2016-130 Link to ES Tech. Rep. Archives: SDM2016-130 |