Paper Abstract and Keywords |
Presentation |
2017-01-30 13:30
[Invited Talk]
First Demonstration of FinFET Split-Gate MONOS for High-Speed and Highly-Reliable Embedded Flash in 16/14nm-node and Beyond Shibun Tsuda, Yoshiyuki Kawashima, Kenichiro Sonoda, Atsushi Yoshitomi, Tatsuyoshi Mihara, Shunichi Narumi, Masao Inoue, Seiji Muranaka, Takahiro Maruyama, Tomohiro Yamashita, Yasuo Yamaguchi (Renesas Electronics), Digh Hisamoto (Hitachi) SDM2016-134 Link to ES Tech. Rep. Archives: SDM2016-134 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
FinFET split-gate metal-oxide nitride oxide silicon (SG-MONOS) Flash memories have been fabricated and operated for the first time. Excellent subthreshold characteristics and small threshold-voltage variability owing to a Fin-structure are clarified. It is demonstrated that Fin top-corner effects are well suppressed by incremental step pulse programming for source side injection. Highly reliable data retention at 150 ºC after 250K program/erase cycles is confirmed for advanced automotive system applications. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
embedded Flash memory / split gate cell / MONOS / FinFET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 448, SDM2016-134, pp. 17-20, Jan. 2017. |
Paper # |
SDM2016-134 |
Date of Issue |
2017-01-23 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2016-134 Link to ES Tech. Rep. Archives: SDM2016-134 |