Paper Abstract and Keywords |
Presentation |
2017-01-27 14:25
C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric) ED2016-110 MW2016-186 Link to ES Tech. Rep. Archives: ED2016-110 MW2016-186 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high efficiency and high power over C-Ku band with 115 % relative bandwidth. The amplifier uses a series-shunt inductor matching network to reduce chip size and the impedance transformation ratio in the interstage matching. The fabricated MMIC chip dimensions are 4.15 mm by 4 mm. Measured small signal gain exceeds 15.4 dB and the output power reaches 40.2 ~ 41.6 dBm with PAE of 17.3 ~ 30.5% over the C-Ku band at 25 V power supply voltage. With a CW output power ripple of 1.4 dB, this work shows significant improvement compared to previous work. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Amplifiers / High Power Amplifier / MMIC / Band width / GaN HEMT / Broadband / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 432, MW2016-186, pp. 75-79, Jan. 2017. |
Paper # |
MW2016-186 |
Date of Issue |
2017-01-19 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2016-110 MW2016-186 Link to ES Tech. Rep. Archives: ED2016-110 MW2016-186 |
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