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| Presentation | 2017-01-27 14:25 C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network Eigo Kuwata, Atsuo Sugimoto, Hidetoshi Koyama, Yoshitaka Kamo, Ryota Komaru, Koji Yamanaka (Mitsubishi Electric)  ED2016-110 MW2016-186 Link to ES Tech. Rep. Archives: ED2016-110 MW2016-186 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Circuit (MMIC) high power amplifier (HPA), which features high efficiency and high power over C-Ku band with 115 % relative bandwidth. The amplifier uses a series-shunt inductor matching network to reduce chip size and the impedance transformation ratio in the interstage matching. The fabricated MMIC chip dimensions are 4.15 mm by 4 mm. Measured small signal gain exceeds 15.4 dB and the output power reaches 40.2 ~ 41.6 dBm with PAE of 17.3 ~ 30.5% over the C-Ku band at 25 V power supply voltage. With a CW output power ripple of 1.4 dB, this work shows significant improvement compared to previous work. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Amplifiers / High Power Amplifier / MMIC / Band width / GaN HEMT / Broadband / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 432, MW2016-186, pp. 75-79, Jan. 2017. | |
| Paper # | MW2016-186 | |
| Date of Issue | 2017-01-19 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-110 MW2016-186 Link to ES Tech. Rep. Archives: ED2016-110 MW2016-186 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2017-01-26 - 2017-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Paper Information | |
| Registration To | MW |
| Conference Code | 2017-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | C-Ku band over 10 W Broadband Power Amplifier using Broadband Series-Shunt Inductor Matching Network |
| Sub Title (in English) | |
| Keyword(1) | Amplifiers |
| Keyword(2) | High Power Amplifier |
| Keyword(3) | MMIC |
| Keyword(4) | Band width |
| Keyword(5) | GaN HEMT |
| Keyword(6) | Broadband |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Eigo Kuwata |
| 1st Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 2nd Author's Name | Atsuo Sugimoto |
| 2nd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 3rd Author's Name | Hidetoshi Koyama |
| 3rd Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 4th Author's Name | Yoshitaka Kamo |
| 4th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 5th Author's Name | Ryota Komaru |
| 5th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
| 6th Author's Name | Koji Yamanaka |
| 6th Author's Affiliation | Mitsubishi Electric Corporation (Mitsubishi Electric) |
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| Speaker | Author-1 |
| Date Time | 2017-01-27 14:25:00 |
| Presentation Time | 25 minutes |
| Registration for | MW |
| Paper # | ED2016-110, MW2016-186 |
| Volume (vol) | vol.116 |
| Number (no) | no.431(ED), no.432(MW) |
| Page | pp.75-79 |
| #Pages | 5 |
| Date of Issue | 2017-01-19 (ED, MW) |
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