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Paper Abstract and Keywords
Presentation 2017-01-27 14:50
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology
Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187 Link to ES Tech. Rep. Archives: ED2016-111 MW2016-187
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT process is presented. The fabricated HPA has achieved the Pout of 28-31.5 W and the PAE (power added efficiency) of 57-60% and the gain of 11-12.5dB over 8% relative bandwidth. To the authors’ knowledge, this is one of the highest level performance among ever-reported ones.
Keyword (in Japanese) (See Japanese page) 
(in English) High-power amplifier / gallium nitride (GaN) / X-band / Internally Matched FET / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 432, MW2016-187, pp. 81-84, Jan. 2017.
Paper # MW2016-187 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-111 MW2016-187 Link to ES Tech. Rep. Archives: ED2016-111 MW2016-187

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To MW 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology 
Sub Title (in English)  
Keyword(1) High-power amplifier  
Keyword(2) gallium nitride (GaN)  
Keyword(3) X-band  
Keyword(4) Internally Matched FET  
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1st Author's Name Yoshifumi Kawamura  
1st Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
2nd Author's Name Masatake Hangai  
2nd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
3rd Author's Name Tomohiro Mizutani  
3rd Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
4th Author's Name Kenichi Tomiyama  
4th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
5th Author's Name Koji Yamanaka  
5th Author's Affiliation Mitsubishi Electric Corporation (Mitsubishi Electric)
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Speaker Author-1 
Date Time 2017-01-27 14:50:00 
Presentation Time 25 minutes 
Registration for MW 
Paper # ED2016-111, MW2016-187 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.81-84 
#Pages
Date of Issue 2017-01-19 (ED, MW) 


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