Paper Abstract and Keywords |
Presentation |
2017-01-27 14:50
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) ED2016-111 MW2016-187 Link to ES Tech. Rep. Archives: ED2016-111 MW2016-187 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, a 30W-class X-band high-efficiency Internally Matched FET (IMFET) implemented in a 0.15 um GaN HEMT process is presented. The fabricated HPA has achieved the Pout of 28-31.5 W and the PAE (power added efficiency) of 57-60% and the gain of 11-12.5dB over 8% relative bandwidth. To the authors’ knowledge, this is one of the highest level performance among ever-reported ones. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
High-power amplifier / gallium nitride (GaN) / X-band / Internally Matched FET / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 432, MW2016-187, pp. 81-84, Jan. 2017. |
Paper # |
MW2016-187 |
Date of Issue |
2017-01-19 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-111 MW2016-187 Link to ES Tech. Rep. Archives: ED2016-111 MW2016-187 |
Conference Information |
Committee |
MW ED |
Conference Date |
2017-01-26 - 2017-01-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
Paper Information |
Registration To |
MW |
Conference Code |
2017-01-MW-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology |
Sub Title (in English) |
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Keyword(1) |
High-power amplifier |
Keyword(2) |
gallium nitride (GaN) |
Keyword(3) |
X-band |
Keyword(4) |
Internally Matched FET |
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1st Author's Name |
Yoshifumi Kawamura |
1st Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric) |
2nd Author's Name |
Masatake Hangai |
2nd Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric) |
3rd Author's Name |
Tomohiro Mizutani |
3rd Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric) |
4th Author's Name |
Kenichi Tomiyama |
4th Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric) |
5th Author's Name |
Koji Yamanaka |
5th Author's Affiliation |
Mitsubishi Electric Corporation (Mitsubishi Electric) |
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Speaker |
Author-1 |
Date Time |
2017-01-27 14:50:00 |
Presentation Time |
25 minutes |
Registration for |
MW |
Paper # |
ED2016-111, MW2016-187 |
Volume (vol) |
vol.116 |
Number (no) |
no.431(ED), no.432(MW) |
Page |
pp.81-84 |
#Pages |
4 |
Date of Issue |
2017-01-19 (ED, MW) |
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