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| Presentation | 2017-01-27 09:55 Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks Kazuto Ohsawa, Shinji Noguchi, Seiko Netsu, Nobukazu Kise, Yasuyuki Miyamoto (Tokyo Tech)  ED2016-103 MW2016-179 Link to ES Tech. Rep. Archives: ED2016-103 MW2016-179 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | III–V compound semiconductors are promising materials for future n-type MOSFET channels because of their high electron mobility. To realize high-performance MOSFETs, the MOSFETs should have low trap densities and high electron mobility. In this study, the mobilities and interface state densities of the MOSFETs with the Al2O3/InGaAs and HfO2/Al2O3/InGaAs gate stacks were extracted after nitrogen plasma/TMA cleaning. The deposition at 120 °C improved the mobility of MOSFETs with HfO2/2-cycle Al2O3/InGaAs gate stacks by twice to that at the deposition at 300 °C, although the dependence of mobility on the deposition temperature in Al2O3/InGaAs gate stacks was weak. The deposition at 120 °C also improved interface state densities. H2 annealing improved or degraded the electron mobilities depending on gate stacks. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Mobility / Interface state density / InGaAs / HfO2 / Al2O3 / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 431, ED2016-103, pp. 35-40, Jan. 2017. | |
| Paper # | ED2016-103 | |
| Date of Issue | 2017-01-19 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-103 MW2016-179 Link to ES Tech. Rep. Archives: ED2016-103 MW2016-179 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2017-01-26 - 2017-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of Electron Mobility on Deposition Temperature and H2 Annealing in MOSFETs with HfO2/Al2O3/InGaAs Gate Stacks |
| Sub Title (in English) | |
| Keyword(1) | Mobility |
| Keyword(2) | Interface state density |
| Keyword(3) | InGaAs |
| Keyword(4) | HfO2 |
| Keyword(5) | Al2O3 |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kazuto Ohsawa |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 2nd Author's Name | Shinji Noguchi |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 3rd Author's Name | Seiko Netsu |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 4th Author's Name | Nobukazu Kise |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
| 5th Author's Name | Yasuyuki Miyamoto |
| 5th Author's Affiliation | Tokyo Institute of Technology (Tokyo Tech) |
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| Speaker | Author-1 |
| Date Time | 2017-01-27 09:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-103, MW2016-179 |
| Volume (vol) | vol.116 |
| Number (no) | no.431(ED), no.432(MW) |
| Page | pp.35-40 |
| #Pages | 6 |
| Date of Issue | 2017-01-19 (ED, MW) |
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