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| Presentation | 2017-01-27 09:30 Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Yasuhiro Nakasha, Naoki Hara, Taisuke Iwai, Naoya Okamoto, Keiji Watanabe (Fujitsu Labs.)  ED2016-102 MW2016-178 Link to ES Tech. Rep. Archives: ED2016-102 MW2016-178 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Noise characteristics of zero-bias backward diodes for terahertz detectors were improved by using a p+-GaAs0.51Sb0.49/n-In0.53Ga0.47As heterojunction structure. Junction resistance was successfully decreased by removing an i-In0.52Al0.48As barrier layer from a conventional p+-GaAs0.51Sb0.49/i-In0.52Al0.48As/n-In0.53Ga0.47As structure. Although sensitivity indicated slight decrease, noise equivalent power (NEP) was drastically improved from 303 to 64 pW/Hz1/2 at 300 GHz | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Tunnel diode / Backward / Millimeter wave / Terahertz wave / GaAsSb / Noise / Detection / Sensitivity | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 431, ED2016-102, pp. 29-33, Jan. 2017. | |
| Paper # | ED2016-102 | |
| Date of Issue | 2017-01-19 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-102 MW2016-178 Link to ES Tech. Rep. Archives: ED2016-102 MW2016-178 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2017-01-26 - 2017-01-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2017-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in Noise Characteristics of Zero-bias GaAsSb-based Backward Diodes |
| Sub Title (in English) | |
| Keyword(1) | Tunnel diode |
| Keyword(2) | Backward |
| Keyword(3) | Millimeter wave |
| Keyword(4) | Terahertz wave |
| Keyword(5) | GaAsSb |
| Keyword(6) | Noise |
| Keyword(7) | Detection |
| Keyword(8) | Sensitivity |
| 1st Author's Name | Tsuyoshi Takahashi |
| 1st Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 2nd Author's Name | Masaru Sato |
| 2nd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 3rd Author's Name | Shoichi Shiba |
| 3rd Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 4th Author's Name | Yasuhiro Nakasha |
| 4th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 5th Author's Name | Naoki Hara |
| 5th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 6th Author's Name | Taisuke Iwai |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 7th Author's Name | Naoya Okamoto |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
| 8th Author's Name | Keiji Watanabe |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Labs.) |
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| Speaker | Author-1 |
| Date Time | 2017-01-27 09:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-102, MW2016-178 |
| Volume (vol) | vol.116 |
| Number (no) | no.431(ED), no.432(MW) |
| Page | pp.29-33 |
| #Pages | 5 |
| Date of Issue | 2017-01-19 (ED, MW) |
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