Paper Abstract and Keywords |
Presentation |
2017-01-26 14:00
[Invited Lecture]
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 Link to ES Tech. Rep. Archives: ED2016-96 MW2016-172 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN transistors have been widely investigated for power deices to be used in various power switching systems. In addition, high-frequency power amplifiers employing GaN transistors are commercially available for cellular base-station applications. Panasonic has been developing GaN transistors taking advantages of its proprietary technologies on the epitaxial growth of GaN on large diameter Si substrates. In this paper, state-of-the-art GaN transistors on Si developed by Panasonic aiming at both switching and high frequency applications are summarized. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN transistor / Si substrate / Switching power device / High frequency power amplifier / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 431, ED2016-96, pp. 1-5, Jan. 2017. |
Paper # |
ED2016-96 |
Date of Issue |
2017-01-19 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-96 MW2016-172 Link to ES Tech. Rep. Archives: ED2016-96 MW2016-172 |
Conference Information |
Committee |
MW ED |
Conference Date |
2017-01-26 - 2017-01-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2017-01-MW-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications |
Sub Title (in English) |
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Keyword(1) |
GaN transistor |
Keyword(2) |
Si substrate |
Keyword(3) |
Switching power device |
Keyword(4) |
High frequency power amplifier |
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1st Author's Name |
Tetsuzo Ueda |
1st Author's Affiliation |
Panasonic (Panasonic) |
2nd Author's Name |
Yasuhiro Uemoto |
2nd Author's Affiliation |
Panasonic (Panasonic) |
3rd Author's Name |
Hiroyuki Sakai |
3rd Author's Affiliation |
Panasonic (Panasonic) |
4th Author's Name |
Tsuyoshi Tanaka |
4th Author's Affiliation |
Panasonic (Panasonic) |
5th Author's Name |
Daisuke Ueda |
5th Author's Affiliation |
Kyoto Insutitute of Technorogy (Kyoto Insutitute of Tech.) |
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Speaker |
Author-1 |
Date Time |
2017-01-26 14:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2016-96, MW2016-172 |
Volume (vol) |
vol.116 |
Number (no) |
no.431(ED), no.432(MW) |
Page |
pp.1-5 |
#Pages |
5 |
Date of Issue |
2017-01-19 (ED, MW) |
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