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Paper Abstract and Keywords
Presentation 2017-01-26 14:00
[Invited Lecture] GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications
Tetsuzo Ueda, Yasuhiro Uemoto, Hiroyuki Sakai, Tsuyoshi Tanaka (Panasonic), Daisuke Ueda (Kyoto Insutitute of Tech.) ED2016-96 MW2016-172 Link to ES Tech. Rep. Archives: ED2016-96 MW2016-172
Abstract (in Japanese) (See Japanese page) 
(in English) GaN transistors have been widely investigated for power deices to be used in various power switching systems. In addition, high-frequency power amplifiers employing GaN transistors are commercially available for cellular base-station applications. Panasonic has been developing GaN transistors taking advantages of its proprietary technologies on the epitaxial growth of GaN on large diameter Si substrates. In this paper, state-of-the-art GaN transistors on Si developed by Panasonic aiming at both switching and high frequency applications are summarized.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN transistor / Si substrate / Switching power device / High frequency power amplifier / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 431, ED2016-96, pp. 1-5, Jan. 2017.
Paper # ED2016-96 
Date of Issue 2017-01-19 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2016-96 MW2016-172 Link to ES Tech. Rep. Archives: ED2016-96 MW2016-172

Conference Information
Committee MW ED  
Conference Date 2017-01-26 - 2017-01-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC and High-Speed, High-Frequency Devices / Microwave Technologies 
Paper Information
Registration To ED 
Conference Code 2017-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GaN Power Transistors on Si Substrates for Switching and High-Frequency Applications 
Sub Title (in English)
Keyword(1) GaN transistor  
Keyword(2) Si substrate  
Keyword(3) Switching power device  
Keyword(4) High frequency power amplifier  
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1st Author's Name Tetsuzo Ueda  
1st Author's Affiliation Panasonic (Panasonic)
2nd Author's Name Yasuhiro Uemoto  
2nd Author's Affiliation Panasonic (Panasonic)
3rd Author's Name Hiroyuki Sakai  
3rd Author's Affiliation Panasonic (Panasonic)
4th Author's Name Tsuyoshi Tanaka  
4th Author's Affiliation Panasonic (Panasonic)
5th Author's Name Daisuke Ueda  
5th Author's Affiliation Kyoto Insutitute of Technorogy (Kyoto Insutitute of Tech.)
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Speaker Author-1 
Date Time 2017-01-26 14:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2016-96, MW2016-172 
Volume (vol) vol.116 
Number (no) no.431(ED), no.432(MW) 
Page pp.1-5 
#Pages
Date of Issue 2017-01-19 (ED, MW) 


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