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| Presentation | 2016-12-19 16:05 Design and fabrication of terahertz detectors based on 180 nm CMOS process technology Kosuke Wakita, Masayuki Ikebe (Hokkaido Univ.), Stevanus Arnold, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiroaki Minamide (RIKEN), Eiichi Sano (Hokkaido Univ.)  ED2016-83 Link to ES Tech. Rep. Archives: ED2016-83 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Use of terahertz waves for imaging is gaining increased interest. A CMOS cascode amplifier biased near the threshold voltage of a MOSFET for terahertz direct detection is proposed. A CMOS terahertz imaging pixel is designed and fabricated on the basis of a low-cost 180 nm CMOS process technology. The imaging pixel consists of a microstrip patch antenna, an impedance-matching circuit, and the direct detector. The imaging circuit occupies 250 × 180 um^2. It achieves a responsivity of 51.9 kV/W at 0.915 THz and a noise equivalent power (NEP) of 358 pW/Hz^1/2 at a modulation frequency of 31 Hz. The NEP is estimated to be reduced to 42 pW/Hz^1/2 at a higher modulation frequency of 100 kHz. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Terahertz / THｚ / Imaging / CMOS / Detector / Responsivity / NEP / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 375, ED2016-83, pp. 17-22, Dec. 2016. | |
| Paper # | ED2016-83 | |
| Date of Issue | 2016-12-12 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-83 Link to ES Tech. Rep. Archives: ED2016-83 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2016-12-19 - 2016-12-20 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | RIEC, Tohoku Univ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter-wave, terahertz-wave devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-12-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Design and fabrication of terahertz detectors based on 180 nm CMOS process technology |
| Sub Title (in English) | |
| Keyword(1) | Terahertz |
| Keyword(2) | THｚ |
| Keyword(3) | Imaging |
| Keyword(4) | CMOS |
| Keyword(5) | Detector |
| Keyword(6) | Responsivity |
| Keyword(7) | NEP |
| Keyword(8) | |
| 1st Author's Name | Kosuke Wakita |
| 1st Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 2nd Author's Name | Masayuki Ikebe |
| 2nd Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
| 3rd Author's Name | Stevanus Arnold |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Taiichi Otsuji |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Yuma Takida |
| 5th Author's Affiliation | RIKEN Center for Advanced Photonics (RIKEN) |
| 6th Author's Name | Hiroaki Minamide |
| 6th Author's Affiliation | RIKEN Center for Advanced Photonics (RIKEN) |
| 7th Author's Name | Eiichi Sano |
| 7th Author's Affiliation | Hokkaido University (Hokkaido Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-12-19 16:05:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-83 |
| Volume (vol) | vol.116 |
| Number (no) | no.375 |
| Page | pp.17-22 |
| #Pages | 6 |
| Date of Issue | 2016-12-12 (ED) |
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