Paper Abstract and Keywords |
Presentation |
2016-12-15 15:30
[Poster Presentation]
High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi, Ken Takeuchi (Chuo Univ.) ICD2016-67 CPSY2016-73 Link to ES Tech. Rep. Archives: ICD2016-67 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Resistive random access memory (ReRAM) is considered as one of the next generation non-volatile memories due to its high-speed program and low power consumption. By applying the program voltage, size of conductive filament is changed and ReRAM cell resistance is switched between high resistance state and low resistance state. Because the ReRAM program voltage is larger than the supply voltage of controller circuit, ReRAM program voltage generator is required. The ReRAM program voltage generator should have fast rising time and high current drivability for high-speed program operation. This paper investigates high-speed operation of ReRAM program voltage generator. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ReRAM / Program voltage generator / High-speed operation / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 364, ICD2016-67, pp. 53-53, Dec. 2016. |
Paper # |
ICD2016-67 |
Date of Issue |
2016-12-08 (ICD, CPSY) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ICD2016-67 CPSY2016-73 Link to ES Tech. Rep. Archives: ICD2016-67 |
Conference Information |
Committee |
ICD CPSY |
Conference Date |
2016-12-15 - 2016-12-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Tokyo Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
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Paper Information |
Registration To |
ICD |
Conference Code |
2016-12-ICD-CPSY |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM |
Sub Title (in English) |
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Keyword(1) |
ReRAM |
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Program voltage generator |
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High-speed operation |
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1st Author's Name |
Kenta Suzuki |
1st Author's Affiliation |
Chuo University (Chuo Univ.) |
2nd Author's Name |
Masahiro Tanaka |
2nd Author's Affiliation |
Chuo University (Chuo Univ.) |
3rd Author's Name |
Kota Tsurumi |
3rd Author's Affiliation |
Chuo University (Chuo Univ.) |
4th Author's Name |
Ken Takeuchi |
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Chuo University (Chuo Univ.) |
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Speaker |
Author-1 |
Date Time |
2016-12-15 15:30:00 |
Presentation Time |
120 minutes |
Registration for |
ICD |
Paper # |
ICD2016-67, CPSY2016-73 |
Volume (vol) |
vol.116 |
Number (no) |
no.364(ICD), no.365(CPSY) |
Page |
p.53 |
#Pages |
1 |
Date of Issue |
2016-12-08 (ICD, CPSY) |
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