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| Presentation | 2016-12-13 14:40 Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.)  ED2016-78 CPM2016-111 LQE2016-94 Link to ES Tech. Rep. Archives: ED2016-78 CPM2016-111 LQE2016-94 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Scattering time () of several inorganic semiconductors are around 10-1 psec. Therefore, electric properties, such as carrier density and mobility, can be obtained by analyzing the dispersion of conductivity ranging for THz regions. We have developed the THz Time-domain Ellipsometry and measured the carrier density, the mobility and the thickness of GaN and SiC epitaxal layer without contact and destruction. Furthermore, we have fabricated the apparatus for characterization of electric properties. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Terahertz / Ellipsometry / Wide gap semiconductor / GaN / SiC / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 357, CPM2016-111, pp. 103-106, Dec. 2016. | |
| Paper # | CPM2016-111 | |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-78 CPM2016-111 LQE2016-94 Link to ES Tech. Rep. Archives: ED2016-78 CPM2016-111 LQE2016-94 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2016-12-12 - 2016-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2016-12-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry |
| Sub Title (in English) | |
| Keyword(1) | Terahertz |
| Keyword(2) | Ellipsometry |
| Keyword(3) | Wide gap semiconductor |
| Keyword(4) | GaN |
| Keyword(5) | SiC |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takashi Fujii |
| 1st Author's Affiliation | Ritsumeikan Univ/Nippo Precision (RITS/PNP) |
| 2nd Author's Name | Kohei Tachi |
| 2nd Author's Affiliation | Ritsumeikan Univ (RITS) |
| 3rd Author's Name | Tsutomu Araki |
| 3rd Author's Affiliation | Ritsumeikan Univ (RITS) |
| 4th Author's Name | Yasushi Nanishi |
| 4th Author's Affiliation | Ritsumeikan Univ (RITS) |
| 5th Author's Name | Toshiyuki Iwamoto |
| 5th Author's Affiliation | Nippo Precision (PNP) |
| 6th Author's Name | Yukinori Sato |
| 6th Author's Affiliation | Nippo Precision (PNP) |
| 7th Author's Name | Takshi Nagashima |
| 7th Author's Affiliation | Setsunan Univ. (Setsunan Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-12-13 14:40:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2016-78, CPM2016-111, LQE2016-94 |
| Volume (vol) | vol.116 |
| Number (no) | no.356(ED), no.357(CPM), no.358(LQE) |
| Page | pp.103-106 |
| #Pages | 4 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
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