Paper Abstract and Keywords |
Presentation |
2016-12-12 17:00
Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process Yusuke Kumazaki, Keisuke Uemura, Taketomo Sato (Hokkaido Univ.) ED2016-66 CPM2016-99 LQE2016-82 Link to ES Tech. Rep. Archives: ED2016-66 CPM2016-99 LQE2016-82 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Electrochemical etching process is demonstrated in this paper to fabricate recessed-gate AlGaN/GaN high electron mobility transistors without inducing damage. Photoelectrochemical measurements of AlGaN/GaN hetero-structures revealed that two kinds of carriers generated in either AlGaN layer or GaN layer could be supplied to solid/liquid interface separately by selecting proper light wavelength and voltage. Photo-carriers generated in GaN layer caused inhomogeneous etching, whereas those generated in AlGaN layer caused homogeneous etching. Moreover in electrochemical etching utilizing photo-carriers generated in AlGaN layer, self-terminating phenomenon was observed, and self-terminating depth could be controlled by light intensity. We believe that electrochemical etching process which has these excellent features is promising as recess etching technique. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium Nitride / HEMT / gate recess / electrochemical etching / self-terminating / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 356, ED2016-66, pp. 45-50, Dec. 2016. |
Paper # |
ED2016-66 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-66 CPM2016-99 LQE2016-82 Link to ES Tech. Rep. Archives: ED2016-66 CPM2016-99 LQE2016-82 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2016-12-12 - 2016-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride semiconductors, optoelectronic devices, and related materials |
Paper Information |
Registration To |
ED |
Conference Code |
2016-12-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low-damage Recess Etching of AlGaN/GaN Hetero-structure by Electrochemical Process |
Sub Title (in English) |
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Keyword(1) |
Gallium Nitride |
Keyword(2) |
HEMT |
Keyword(3) |
gate recess |
Keyword(4) |
electrochemical etching |
Keyword(5) |
self-terminating |
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1st Author's Name |
Yusuke Kumazaki |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Keisuke Uemura |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Taketomo Sato |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2016-12-12 17:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2016-66, CPM2016-99, LQE2016-82 |
Volume (vol) |
vol.116 |
Number (no) |
no.356(ED), no.357(CPM), no.358(LQE) |
Page |
pp.45-50 |
#Pages |
6 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
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