Paper Abstract and Keywords |
Presentation |
2016-12-12 16:35
Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate Suzuki Atsuya, Joel Asubar, Tokuda Hirokuni, Kuzuhara Masaaki (Univ. Fukui) ED2016-65 CPM2016-98 LQE2016-81 Link to ES Tech. Rep. Archives: ED2016-65 CPM2016-98 LQE2016-81 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have fabricated a novel AlGaN/GaN HEMT with a multi-grooved and fin-shaped gate field-plate (G-FP), and studied its effect on the current collapse. Compared to the conventional gate FP device, the novel HEMT with a 3-dimensional FP (3DFP) structure exhibited a minimum increase in the dynamic on-resistance, demonstrating that an almost perfect collapse-free operation was achieved with a normalized dynamic on-resistance of less than 1.1. The results of groove depth dependence indicated that the current collapse in 3DFP HEMTs was most effectively suppressed when the groove depth was adjusted so that the bottom of the 3DFP electrode was aligned with the depth of 2-dimensional electron gas (2DEG) in a GaN channel. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN HEMT / Current Collapse / 3DFP / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 356, ED2016-65, pp. 41-44, Dec. 2016. |
Paper # |
ED2016-65 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2016-65 CPM2016-98 LQE2016-81 Link to ES Tech. Rep. Archives: ED2016-65 CPM2016-98 LQE2016-81 |
Conference Information |
Committee |
CPM LQE ED |
Conference Date |
2016-12-12 - 2016-12-13 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kyoto University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride semiconductors, optoelectronic devices, and related materials |
Paper Information |
Registration To |
ED |
Conference Code |
2016-12-CPM-LQE-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Reduced Current Collapse in AlGaN/GaN HEMTs with a 3-Dimensional Field Plate |
Sub Title (in English) |
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Keyword(1) |
AlGaN/GaN HEMT |
Keyword(2) |
Current Collapse |
Keyword(3) |
3DFP |
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1st Author's Name |
Suzuki Atsuya |
1st Author's Affiliation |
University of Fukui (Univ. Fukui) |
2nd Author's Name |
Joel Asubar |
2nd Author's Affiliation |
University of Fukui (Univ. Fukui) |
3rd Author's Name |
Tokuda Hirokuni |
3rd Author's Affiliation |
University of Fukui (Univ. Fukui) |
4th Author's Name |
Kuzuhara Masaaki |
4th Author's Affiliation |
University of Fukui (Univ. Fukui) |
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Speaker |
Author-1 |
Date Time |
2016-12-12 16:35:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2016-65, CPM2016-98, LQE2016-81 |
Volume (vol) |
vol.116 |
Number (no) |
no.356(ED), no.357(CPM), no.358(LQE) |
Page |
pp.41-44 |
#Pages |
4 |
Date of Issue |
2016-12-05 (ED, CPM, LQE) |
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