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| Presentation | 2016-12-12 16:10 AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current Yudai Suzuki, Taisei Yamazaki, Shinya Makino, Joel T. Asubar, Hirokuni Tokuda, Masaaki Kuzuhara (Univ.Fukui)  ED2016-64 CPM2016-97 LQE2016-80 Link to ES Tech. Rep. Archives: ED2016-64 CPM2016-97 LQE2016-80 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have studied the characteristics of off-state breakdown voltage and on-state resistance of large gate-periphery AlGaN/GaN HEMTs with ampere-class drain current capability, which were developed for power-conversion circuit applications. A significant degradation in the off-state breakdown voltage was observed with increasing the total gate width. It was found that the breakdown degradation observed for larger gate-area devices is closely related to the drain electrode pattern shape and the ohmic annealing process. In addition, we have fabricated ampere-class AlGaN/GaN MOS HEMTs with a gate field plate to investigate its effect on the dynamic on-resistance characteristics. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMT / High Current / High Breakdown Voltage / Current Collapse / Field Plate / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 356, ED2016-64, pp. 35-39, Dec. 2016. | |
| Paper # | ED2016-64 | |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2016-64 CPM2016-97 LQE2016-80 Link to ES Tech. Rep. Archives: ED2016-64 CPM2016-97 LQE2016-80 |
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| Conference Information | |
| Committee | CPM LQE ED |
| Conference Date | 2016-12-12 - 2016-12-13 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride semiconductors, optoelectronic devices, and related materials |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2016-12-CPM-LQE-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN HEMTs with High Breakdown Voltage and High Drain Current |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | High Current |
| Keyword(3) | High Breakdown Voltage |
| Keyword(4) | Current Collapse |
| Keyword(5) | Field Plate |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yudai Suzuki |
| 1st Author's Affiliation | University of Fukui (Univ.Fukui) |
| 2nd Author's Name | Taisei Yamazaki |
| 2nd Author's Affiliation | University of Fukui (Univ.Fukui) |
| 3rd Author's Name | Shinya Makino |
| 3rd Author's Affiliation | University of Fukui (Univ.Fukui) |
| 4th Author's Name | Joel T. Asubar |
| 4th Author's Affiliation | University of Fukui (Univ.Fukui) |
| 5th Author's Name | Hirokuni Tokuda |
| 5th Author's Affiliation | University of Fukui (Univ.Fukui) |
| 6th Author's Name | Masaaki Kuzuhara |
| 6th Author's Affiliation | University of Fukui (Univ.Fukui) |
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| Speaker | Author-1 |
| Date Time | 2016-12-12 16:10:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2016-64, CPM2016-97, LQE2016-80 |
| Volume (vol) | vol.116 |
| Number (no) | no.356(ED), no.357(CPM), no.358(LQE) |
| Page | pp.35-39 |
| #Pages | 5 |
| Date of Issue | 2016-12-05 (ED, CPM, LQE) |
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