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Paper Abstract and Keywords
Presentation 2016-11-30 14:35
ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device
Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) CPM2016-89 ICD2016-50 IE2016-84 Link to ES Tech. Rep. Archives: CPM2016-89 ICD2016-50
Abstract (in Japanese) (See Japanese page) 
(in English) Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low power operation compared with the conventional NAND flash memory. The IoT edge device requires to merge sensor, memory and controller into one package for miniaturization. This paper has two proposals. First, the proposed boost converter is proposed to achieve 1.0 V operation and high speed ReRAM set/reset time, simultaneously. Finally, 0.6 V operation ReRAM program voltage generator with the 2 µA to 8 µA adaptive comparator current (ICMP) is proposed to achieve low ReRAM write voltage ripple (VRIPPLE) and high energy efficiency, simultaneously. The proposed boost converter reduces the ReRAM set/reset time by 71 % compared with the conventional boost converter. Besides the boost converter with proposed scheme improves 6.6 % energy efficiency compared with the boost converter with fixed 8 µA large ICMP.
Keyword (in Japanese) (See Japanese page) 
(in English) Resistive RAM(ReRAM) / boost converter / Internet of Things(IoT) / IoT edge device / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 334, ICD2016-50, pp. 69-74, Nov. 2016.
Paper # ICD2016-50 
Date of Issue 2016-11-22 (CPM, ICD, IE) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF CPM2016-89 ICD2016-50 IE2016-84 Link to ES Tech. Rep. Archives: CPM2016-89 ICD2016-50

Conference Information
Conference Date 2016-11-28 - 2016-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Ritsumeikan University, Osaka Ibaraki Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2016 -New Field of VLSI Design- 
Paper Information
Registration To ICD 
Conference Code 2016-11-VLD-DC-CPSY-RECONF-CPM-ICD-IE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device 
Sub Title (in English)  
Keyword(1) Resistive RAM(ReRAM)  
Keyword(2) boost converter  
Keyword(3) Internet of Things(IoT)  
Keyword(4) IoT edge device  
1st Author's Name Kota Tsurumi  
1st Author's Affiliation Chuo University (Chuo Univ.)
2nd Author's Name Masahiro Tanaka  
2nd Author's Affiliation Chuo University (Chuo Univ.)
3rd Author's Name Ken Takeuchi  
3rd Author's Affiliation Chuo University (Chuo Univ.)
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Date Time 2016-11-30 14:35:00 
Presentation Time 25 
Registration for ICD 
Paper # IEICE-CPM2016-89,IEICE-ICD2016-50,IEICE-IE2016-84 
Volume (vol) IEICE-116 
Number (no) no.333(CPM), no.334(ICD), no.335(IE) 
Page pp.69-74 
#Pages IEICE-6 
Date of Issue IEICE-CPM-2016-11-22,IEICE-ICD-2016-11-22,IEICE-IE-2016-11-22 

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