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Paper Abstract and Keywords
Presentation 2016-11-29 09:00
Design and Implementation Methodology of Low-power Standard cell memory with optimized body-bias separation in Silicon-on-Thin-BOX (SOTB)
Yusuke Yoshida, Kimiyoshi Usami (Shibaura Institute of Tech.) VLD2016-53 DC2016-47
Abstract (in Japanese) (See Japanese page) 
(in English) We focus on the Standard Cell Memory (SCM) as another option to supersede SRAM for low-voltage operation. This paper describes a design of low-power SCM using Silicon-on-Thin-BOX (SOTB). In particular, we present automatic place and routing(P&R) methodology for optimal body-bias separation(BBS) for SCM. Simulation results demonstrated that proposed automatic P&R methodology can reduce wire length by 22% and energy consumption by 57% as compared to the standard digital flow. We also found that the proposed SCM operates at the minimum energy point (0.3V) with 3.7fJ energy per bit-access because we can reduce leakage energy in Near-Vth/Sub-Vth region by optimal BBS.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon-on-Thin-BOX MOSFET / Body Bias / Standard Cell Memory / Ultra-low voltage operation / Low-power / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 330, VLD2016-53, pp. 55-60, Nov. 2016.
Paper # VLD2016-53 
Date of Issue 2016-11-21 (VLD, DC) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee VLD DC CPSY RECONF CPM ICD IE  
Conference Date 2016-11-28 - 2016-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Ritsumeikan University, Osaka Ibaraki Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Design Gaia 2016 -New Field of VLSI Design- 
Paper Information
Registration To VLD 
Conference Code 2016-11-VLD-DC-CPSY-RECONF-CPM-ICD-IE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design and Implementation Methodology of Low-power Standard cell memory with optimized body-bias separation in Silicon-on-Thin-BOX (SOTB) 
Sub Title (in English)  
Keyword(1) Silicon-on-Thin-BOX MOSFET  
Keyword(2) Body Bias  
Keyword(3) Standard Cell Memory  
Keyword(4) Ultra-low voltage operation  
Keyword(5) Low-power  
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Keyword(8)  
1st Author's Name Yusuke Yoshida  
1st Author's Affiliation Shibaura Institute of Technolog (Shibaura Institute of Tech.)
2nd Author's Name Kimiyoshi Usami  
2nd Author's Affiliation Shibaura Institute of Technolog (Shibaura Institute of Tech.)
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Speaker
Date Time 2016-11-29 09:00:00 
Presentation Time 25 
Registration for VLD 
Paper # IEICE-VLD2016-53,IEICE-DC2016-47 
Volume (vol) IEICE-116 
Number (no) no.330(VLD), no.331(DC) 
Page pp.55-60 
#Pages IEICE-6 
Date of Issue IEICE-VLD-2016-11-21,IEICE-DC-2016-11-21 


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