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| Presentation | 2016-11-10 11:00 [Invited Talk] Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) Naoki Tega, Digh Hisamoto, Akio Shima, Yasuhiro Shimamoto (Hitachi)  SDM2016-80 Link to ES Tech. Rep. Archives: SDM2016-80 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We comprehensively studied the channel properties of a silicon carbide trench-etched double-implanted MOS (SiC TED MOS). The TED MOS structure provides three types of channels: trench-side-wall (TSW), top, and bottom. The mobility of the TSW channels is about three times higher than that of the top channel. We report that TED MOS gives more advantageous than conventional SiC trench MOSs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide / SiC / Trench / DMOS / Mobility / Trap / Charge pumping / Interface trap | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 296, SDM2016-80, pp. 9-14, Nov. 2016. | |
| Paper # | SDM2016-80 | |
| Date of Issue | 2016-11-03 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-80 Link to ES Tech. Rep. Archives: SDM2016-80 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-11-10 - 2016-11-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-11-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Channel Properties of SiC Trench-Etched Double-Implanted MOS (TED MOS) |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide |
| Keyword(2) | SiC |
| Keyword(3) | Trench |
| Keyword(4) | DMOS |
| Keyword(5) | Mobility |
| Keyword(6) | Trap |
| Keyword(7) | Charge pumping |
| Keyword(8) | Interface trap |
| 1st Author's Name | Naoki Tega |
| 1st Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 2nd Author's Name | Digh Hisamoto |
| 2nd Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 3rd Author's Name | Akio Shima |
| 3rd Author's Affiliation | Hitachi, Ltd. (Hitachi) |
| 4th Author's Name | Yasuhiro Shimamoto |
| 4th Author's Affiliation | Hitachi, Ltd. (Hitachi) |
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| Speaker | Author-1 |
| Date Time | 2016-11-10 11:00:00 |
| Presentation Time | 60 minutes |
| Registration for | SDM |
| Paper # | SDM2016-80 |
| Volume (vol) | vol.116 |
| Number (no) | no.296 |
| Page | pp.9-14 |
| #Pages | 6 |
| Date of Issue | 2016-11-03 (SDM) |
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