Paper Abstract and Keywords |
Presentation |
2016-10-28 13:00
[Invited Talk]
Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors Kei Noda, Haruki Nagahama, Ryo Yamamoto, Yasuo Wada (Keio Univ.), Toru Toyabe (Toyo Univ.) OME2016-38 Link to ES Tech. Rep. Archives: OME2016-38 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Device fabrication and simulation analysis of organic thin-film transistors, which especially focused on contact doping and chemical modification of the electrode surfaces, were performed. The analysis results for contact-doped pentacene thin-film transistors with bottom-gate, top-contact configuration indicate the improved carrier injection due to the reduction of the thickness of the tunneling barrier at the source/semiconductor interface. Additionally, for bottom-gate, bottom-contact pentacene transistors with gold source-drain electrodes treated with pentafluorobenzenethiol, both the decrease in the carrier injection barrier and the improvement of the film structure at the electrode/semiconductor interface should be considered for discussing and understanding the effects of the contact modification in detail. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Organic Thin-Film Transistor / Contact Modification / Device Simulation / Schottky Barrier / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 116, no. 281, OME2016-38, pp. 1-4, Oct. 2016. |
Paper # |
OME2016-38 |
Date of Issue |
2016-10-21 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
OME2016-38 Link to ES Tech. Rep. Archives: OME2016-38 |
Conference Information |
Committee |
OME |
Conference Date |
2016-10-28 - 2016-10-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Organic device, Materials, General |
Paper Information |
Registration To |
OME |
Conference Code |
2016-10-OME |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Device Simulation Analysis of Contact Modification in Organic Thin-Film Transistors |
Sub Title (in English) |
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Keyword(1) |
Organic Thin-Film Transistor |
Keyword(2) |
Contact Modification |
Keyword(3) |
Device Simulation |
Keyword(4) |
Schottky Barrier |
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1st Author's Name |
Kei Noda |
1st Author's Affiliation |
Keio University (Keio Univ.) |
2nd Author's Name |
Haruki Nagahama |
2nd Author's Affiliation |
Keio University (Keio Univ.) |
3rd Author's Name |
Ryo Yamamoto |
3rd Author's Affiliation |
Keio University (Keio Univ.) |
4th Author's Name |
Yasuo Wada |
4th Author's Affiliation |
Keio University (Keio Univ.) |
5th Author's Name |
Toru Toyabe |
5th Author's Affiliation |
Toyo Universiry (Toyo Univ.) |
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Speaker |
Author-1 |
Date Time |
2016-10-28 13:00:00 |
Presentation Time |
40 minutes |
Registration for |
OME |
Paper # |
OME2016-38 |
Volume (vol) |
vol.116 |
Number (no) |
no.281 |
Page |
pp.1-4 |
#Pages |
4 |
Date of Issue |
2016-10-21 (OME) |
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