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| Presentation | 2016-10-27 10:50 Behavior of Random Telegraph Noise toward Bias Voltage Changing Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)  SDM2016-75 Link to ES Tech. Rep. Archives: SDM2016-75 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have become larger. To analyze and decrease the effect of RTN in advanced LSI we evaluate the dynamic response of RTN time constants toward the operation bias voltage changing and observed dynamic response of RTN successfully. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | RTN(Random Telegraph Noise) / MOSFET / Time Constants / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 116, no. 270, SDM2016-75, pp. 35-38, Oct. 2016. | |
| Paper # | SDM2016-75 | |
| Date of Issue | 2016-10-19 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2016-75 Link to ES Tech. Rep. Archives: SDM2016-75 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2016-10-26 - 2016-10-27 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2016-10-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Behavior of Random Telegraph Noise toward Bias Voltage Changing |
| Sub Title (in English) | |
| Keyword(1) | RTN(Random Telegraph Noise) |
| Keyword(2) | MOSFET |
| Keyword(3) | Time Constants |
| Keyword(4) | |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Takezo Mawaki |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Akinobu Teramoto |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Rihito Kuroda |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Shinya Ichino |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Tetsuya Goto |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Tomoyuki Suwa |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Shigetoshi Sugawa |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
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| Speaker | Author-1 |
| Date Time | 2016-10-27 10:50:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2016-75 |
| Volume (vol) | vol.116 |
| Number (no) | no.270 |
| Page | pp.35-38 |
| #Pages | 4 |
| Date of Issue | 2016-10-19 (SDM) |
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