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Paper Abstract and Keywords
Presentation 2016-10-27 10:50
Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75 Link to ES Tech. Rep. Archives: SDM2016-75
Abstract (in Japanese) (See Japanese page) 
(in English) As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have become larger. To analyze and decrease the effect of RTN in advanced LSI we evaluate the dynamic response of RTN time constants toward the operation bias voltage changing and observed dynamic response of RTN successfully.
Keyword (in Japanese) (See Japanese page) 
(in English) RTN(Random Telegraph Noise) / MOSFET / Time Constants / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 270, SDM2016-75, pp. 35-38, Oct. 2016.
Paper # SDM2016-75 
Date of Issue 2016-10-19 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2016-75 Link to ES Tech. Rep. Archives: SDM2016-75

Conference Information
Committee SDM  
Conference Date 2016-10-26 - 2016-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2016-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Behavior of Random Telegraph Noise toward Bias Voltage Changing 
Sub Title (in English)  
Keyword(1) RTN(Random Telegraph Noise)  
Keyword(2) MOSFET  
Keyword(3) Time Constants  
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1st Author's Name Takezo Mawaki  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Rihito Kuroda  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Shinya Ichino  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
5th Author's Name Tetsuya Goto  
5th Author's Affiliation Tohoku University (Tohoku Univ.)
6th Author's Name Tomoyuki Suwa  
6th Author's Affiliation Tohoku University (Tohoku Univ.)
7th Author's Name Shigetoshi Sugawa  
7th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker
Date Time 2016-10-27 10:50:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2016-75 
Volume (vol) IEICE-116 
Number (no) no.270 
Page pp.35-38 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2016-10-19 


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