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Paper Abstract and Keywords
Presentation 2016-10-27 10:00
Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition
Masaya Saito, Tomoyuki Suwa, Akinobu Teramoto, Rihito Kuroda, Yasumasa Koda, Hisaya Sugita, Hidekazu Ishii, Yoshinobu Shiba, Yasuyuki Shirai, Shigetoshi Sugawa (Tohoku univ.), Marie Hayashi, Junichi Tsuchimoto (CANON ANELVA) SDM2016-73 Link to ES Tech. Rep. Archives: SDM2016-73
Abstract (in Japanese) (See Japanese page) 
(in English) Al2O3 is a prospective high-dielectric material for the gate insulator film of the power devices and MIM (Metal-Insulator-Metal) capacitors. In the former study, it was confirmed that Al2O3 can be formed without oxidizing Al2O3/Si interface by ALD (Atomic Layer Deposition) at stage temperature of 75℃. However, in this case, fixed oxide charge increases because of low oxidation ability. PDP (Post Deposition Process) is an effective way to solve this problem. In this study, Al2O3 and Al2O3/substrate interface are evaluated by electrical characteristics, RBS (Rutherford Backscattering Spectroscopy) and HAXPES (Hard X-ray Photoelectron Spectroscopy) measurement when PDP by different oxidizing species are introduced.
Keyword (in Japanese) (See Japanese page) 
(in English) Al2O3 / ALD / PDP / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 270, SDM2016-73, pp. 27-30, Oct. 2016.
Paper # SDM2016-73 
Date of Issue 2016-10-19 (SDM) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2016-10-26 - 2016-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English) Niche, Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process Science and New Process Technology 
Paper Information
Registration To SDM 
Conference Code 2016-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of the oxidizing species on the interface of Al2O3 film by atomic layer deposition 
Sub Title (in English)  
Keyword(1) Al2O3  
Keyword(2) ALD  
Keyword(3) PDP  
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1st Author's Name Masaya Saito  
1st Author's Affiliation Tohoku University (Tohoku univ.)
2nd Author's Name Tomoyuki Suwa  
2nd Author's Affiliation Tohoku University (Tohoku univ.)
3rd Author's Name Akinobu Teramoto  
3rd Author's Affiliation Tohoku University (Tohoku univ.)
4th Author's Name Rihito Kuroda  
4th Author's Affiliation Tohoku University (Tohoku univ.)
5th Author's Name Yasumasa Koda  
5th Author's Affiliation Tohoku University (Tohoku univ.)
6th Author's Name Hisaya Sugita  
6th Author's Affiliation Tohoku University (Tohoku univ.)
7th Author's Name Hidekazu Ishii  
7th Author's Affiliation Tohoku University (Tohoku univ.)
8th Author's Name Yoshinobu Shiba  
8th Author's Affiliation Tohoku University (Tohoku univ.)
9th Author's Name Yasuyuki Shirai  
9th Author's Affiliation Tohoku University (Tohoku univ.)
10th Author's Name Shigetoshi Sugawa  
10th Author's Affiliation Tohoku University (Tohoku univ.)
11th Author's Name Marie Hayashi  
11th Author's Affiliation CANON ANELVA CORPORATION (CANON ANELVA)
12th Author's Name Junichi Tsuchimoto  
12th Author's Affiliation CANON ANELVA CORPORATION (CANON ANELVA)
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Speaker
Date Time 2016-10-27 10:00:00 
Presentation Time 25 
Registration for SDM 
Paper # IEICE-SDM2016-73 
Volume (vol) IEICE-116 
Number (no) no.270 
Page pp.27-30 
#Pages IEICE-4 
Date of Issue IEICE-SDM-2016-10-19 


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