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Paper Abstract and Keywords
Presentation 2016-10-20 14:55
C-Band GaN Diode Rectifier for HySIC MPT System
Satoshi Yoshida (Kagoshima Univ.), Akihira Miyachi (JAXA), Ryoko Kishikawa, Masahiro Horibe (AIST), Kenjiro Nishikawa (Kagoshima Univ.), Shigeo Kawasaki (JAXA) EMCJ2016-69 MW2016-101 EST2016-65 Link to ES Tech. Rep. Archives: MW2016-101 EST2016-65
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we evaluate a 5.8 GHz rectifier using GaN diode for space solar power system application.
As a first step, a single diode was measured and modeled by fitting. Finally, a 5.8 GHz high power rectifier was
designed and fabricated using RO4350 substrate. Measured RF–DC conversion efficiency and output DC power at
5.9 GHz (40 dBm) are 32.6% and 3042mW, respectively. This report makes a first step for future miniaturization by
the hybrid semiconductor integrated circuit (HySIC) technology which utilizes different type semiconductor devices.
Keyword (in Japanese) (See Japanese page) 
(in English) Wireless Power Transmission / space solar power system / hybrid semiconductor integrated circuit / / / / /  
Reference Info. IEICE Tech. Rep., vol. 116, no. 254, MW2016-101, pp. 53-56, Oct. 2016.
Paper # MW2016-101 
Date of Issue 2016-10-13 (EMCJ, MW, EST) 
ISSN Print edition: ISSN 0913-5685  Online edition: ISSN 2432-6380
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF EMCJ2016-69 MW2016-101 EST2016-65 Link to ES Tech. Rep. Archives: MW2016-101 EST2016-65

Conference Information
Conference Date 2016-10-20 - 2016-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Microwave, Electromagnetic simulation, EMC, etc. 
Paper Information
Registration To MW 
Conference Code 2016-10-EMCJ-EMC-MW-EST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-Band GaN Diode Rectifier for HySIC MPT System 
Sub Title (in English)  
Keyword(1) Wireless Power Transmission  
Keyword(2) space solar power system  
Keyword(3) hybrid semiconductor integrated circuit  
1st Author's Name Satoshi Yoshida  
1st Author's Affiliation Kagoshima University (Kagoshima Univ.)
2nd Author's Name Akihira Miyachi  
2nd Author's Affiliation JAXA (JAXA)
3rd Author's Name Ryoko Kishikawa  
3rd Author's Affiliation AIST (AIST)
4th Author's Name Masahiro Horibe  
4th Author's Affiliation AIST (AIST)
5th Author's Name Kenjiro Nishikawa  
5th Author's Affiliation Kagoshima University (Kagoshima Univ.)
6th Author's Name Shigeo Kawasaki  
6th Author's Affiliation JAXA (JAXA)
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Date Time 2016-10-20 14:55:00 
Presentation Time 25 
Registration for MW 
Paper # IEICE-EMCJ2016-69,IEICE-MW2016-101,IEICE-EST2016-65 
Volume (vol) IEICE-116 
Number (no) no.253(EMCJ), no.254(MW), no.255(EST) 
Page pp.53-56 
#Pages IEICE-4 
Date of Issue IEICE-EMCJ-2016-10-13,IEICE-MW-2016-10-13,IEICE-EST-2016-10-13 

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